Browsing by Author An, Xia

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Issue Date Title Author(s)
2017 Benchmarking TFET from a circuit level perspective: Applications and guideline Guo, Lingyi;Ye, Le;Chen, Cheng;Huang, Qianqian;Yang, Libo;Lv, Zhu;An, Xia;Huang, Ru
Jul-2020 Bias and geometry dependence of total-ionizing-dose effects in SOI FinFETs Ren, Zhexuan;An, Xia;Li, Gensong;Wang, Runsheng;Xu, Nuo;Zhang, Xing;Huang, Ru
2008 A comparative study on analog/RF performance of UTB GOI and SOI devices Zhuge, Jing;An, Xia;Huang, Ru;Xiao, Han;Hou, Xiaoyu;Wang, Runsheng;Wang, Yangyuan
Jun-2021 Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets Cai, Qifeng;Tan, Congwei;Wang, Jingyue;Tu, Teng;Sun, Shuang;Li, Xiaokang;Zhang, Baotong;Li, Haixia;Xu, Xiaoyan;An, Xia;Zhang, Xing;Huang, Ru;Peng, Hailin;He, Ming;Li, Ming
2018 Design and simulation of a novel multi-floating-gate synaptic nanowire transistor for neuromorphic computing Li, Xiaokang;Yang, Yuancheng;Chen, Gong;Sun, Shuang;Cai, Qifeng;Dong, Xiaoqiao;Xu, Xiaoyan;An, Xia;Li, Ming;Huang, Ru
2010 Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface Guo, Yue;An, Xia;Huang, Ru;Zhang, Xing
20-May-2020 Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors Dong, Xiaoqiao;Li, Ming;Zhang, Wanrong;Yang, Yuancheng;Chen, Gong;Sun, Shuang;Wang, Jianing;Xu, Xiaoyan;An, Xia
2019 THE EFFECTS OF CARBON ON PHOSPHORUS DIFFUSION AND ACTIVATION IN GE Hu, Xiangyang;Zhang, Bingxin;Xu, Xiaoyan;Li, Ming;An, Xia;Huang, Andru
2012 Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation Lin, Meng;Yun, Quanxin;Li, Min;Li, Zhiqiang;An, Xia;Li, Ming;Zhang, Xing;Huang, Ru
2012 Enhanced nitrogen plasma immersion passivation method for high-K/Ge stack formation Lin, Meng;Yun, Quanxin;Li, Min;Li, Zhiqiang;An, Xia;Li, Ming;Zhang, Xing;Ru, Huang
2008 Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structure Zhou, Falong;Huang, Ru;Wu, Dake;An, Xia;Guo, Ao;Xu, Xiaoyan;Zhang, Dacheng;Zhang, Xing;Wang, Yangyuan
2015 Ge surface passivation by GeO2 fabricated by N2O plasma oxidation Lin, Meng;An, Xia;Li, Ming;Yun, Quan Xin;Li, Min;Li, Zhi Qiang;Liu, Peng Qiang;Zhang, Xing;Huang, Ru
2018 GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs Zhang, Bingxin;An, Xia;Hu, Xiangyang;Li, Ming;Zhang, Xing;Huang, Ru
2012 Heavy-Ion-Induced Permanent Damage in Ultra-deep Submicron Fully Depleted SOI Devices Tan, Fei;An, Xia;Huang, Liangxi;Zhang, Xing;Huang, Ru
2020 High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique Ren, Zhexuan;An, Xia;Zhang, Bingxin;Sun, Shuang;Gao, Fei;Li, Ming;Zhang, Xing;Huang, Ru
2014 High performance tunnel field-effect transistor by gate and source engineering Huang, Ru;Huang, Qianqian;Chen, Shaowen;Wu, Chunlei;Wang, Jiaxin;An, Xia;Wang, Yangyuan
2018 Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance Dong, Xiaoqiao;Yang, Yuancheng;Chen, Gong;Sun, Shuang;Cai, Qifeng;Li, Xiaokang;An, Xia;Xu, Xiaoyan;Zhang, Wanrong;Li, Ming
2018 Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance Dong, Xiaoqiao;Yang, Yuancheng;Chen, Gong;Sun, Shuang;Cai, Qifeng;Li, Xiaokang;An, Xia;Xu, Xiaoyan;Zhang, Wanrong;Li, Ming
2015 Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance Wu, Weikang;An, Xia;Tan, Fei;Chen, Yehua;Liu, Jingjing;Zhang, Yao;Zhang, Xing;Shen, Dongjun;Guo, Gang;Huang, Ru
2015 Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance Wu, Weikang;An, Xia;Tan, Fei;Chen, Yehua;Liu, Jingjing;Zhang, Yao;Zhang, Xing;Shen, Dongjun;Guo, Gang;Huang, Ru
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