| Issue Date | Title | Author(s) |
| 2019 | THE EFFECTS OF CARBON ON PHOSPHORUS DIFFUSION AND ACTIVATION IN GE | Hu, Xiangyang; Zhang, Bingxin; Xu, Xiaoyan; Li, Ming; An, Xia; Huang, Andru |
| 2018 | GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs | Zhang, Bingxin; An, Xia; Hu, Xiangyang; Li, Ming; Zhang, Xing; Huang, Ru |
| 2020 | High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique | Ren, Zhexuan; An, Xia; Zhang, Bingxin; Sun, Shuang; Gao, Fei; Li, Ming; Zhang, Xing; Huang, Ru |
| 2015 | N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology | Liu, Pengqiang; Li, Ming; An, Xia; Lin, Meng; Zhao, Yang; Zhang, Bingxin; Xia, Xuyuan; Huang, Ru |
| 2015 | N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology | Liu, Pengqiang; Li, Ming; An, Xia; Lin, Meng; Zhao, Yang; Zhang, Bingxin; Xia, Xuyuan; Huang, Ru |
| 2018 | Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices | Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru |
| 2007 | Paraneoplastic plemphigus | Zhu, Xuejun; Zhang, Bingxin |
| 2014 | Surface pretreatment and passivation utilizing high concetrated HCL and NH4F solution for germanium-based technology | Xia, Yuxuan; Zhang, Bingxin; Li, Min; Lin, Meng; Liu, Pengqiang; Zhao, Yang; Li, Ming; An, Xia; Zhang, Xing; Huang, Ru |
| 2016 | Thermal Stability Improvement of Nickel Germanide Utilizing Nitrogen Plasma Pretreatment for Germanium-Based Technology | Zhang, Bingxin; An, Xia; Liu, Pengqiang; Li, Ming; Lin, Meng; Hao, Peilin; Zhang, Xing; Huang, Ru |
| 2018 | TISI2 formation and mechanism through ultra-thin Al2O3intermediation | Hao, Peilin; Li, Ming; Zhang, Bingxin; Gao, Siyang; An, Xia; Huang, Ru |
