| Title | A comparative study on analog/RF performance of UTB GOI and SOI devices |
| Authors | Zhuge, Jing An, Xia Huang, Ru Xiao, Han Hou, Xiaoyu Wang, Runsheng Wang, Yangyuan |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | NOISE PERFORMANCE ELECTRON-MOBILITY ULTRATHIN SOI MOSFETS GATE RF PMOSFETS LAYERS BULK |
| Issue Date | 2008 |
| Publisher | semiconductor science and technology |
| Citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2008,23,(7). |
| Abstract | In this paper, a comprehensive comparison of analog/RF performance of ultra-thin-body (UTB) GOI and UTB SOI devices is investigated through simulation. Analog/RF figures of merit of GOI and SOI devices are estimated including g(m)/I(d) values, intrinsic gain (g(m)/g(d)), cutoff frequency (f(T)), maximum oscillation frequency (f(MAX)) and intrinsic delay (CV/I). The results show that GOI devices exhibit great gain performance enhancement over SOI devices. Besides, fT and fMAX of GOI devices are also higher than those of SOI devices. Furthermore, GOI devices show strong potential for low-power circuit applications since their advantages over SOI devices are more remarkable biasing at low operating voltages. The results demonstrate that GOI devices exhibit improved analog/RF scaling capability and are suitable for low-voltage, low-power analog/RF circuit applications. |
| URI | http://hdl.handle.net/20.500.11897/292078 |
| ISSN | 0268-1242 |
| DOI | 10.1088/0268-1242/23/7/075009 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
