| Issue Date |
Title |
Author(s) |
| 2018 |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM |
Wu, Cheng-Hsien;Lin, Shih-Kai;Pan, Chih-Hung;Chen, Po-Hsun;Lin, Wen-Yan;Chang, Ting-Chang;Tsai, Tsung-Ming;Xu, You-Lin;Shih, Chih-Cheng;Lin, Yu-Shuo;Chen, Wen-Chung;Wang, Ming-Hui;Zhang, Sheng-Dong;Sze, Simon M. |
| 2017 |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode |
Lin, Chih-Yang;Chen, Po-Hsun;Chang, Ting-Chang;Chang, Kuan-Chang;Zhang, Sheng-Dong;Tsai, Tsung-Ming;Pan, Chih-Hung;Chen, Min-Chen;Su, Yu-Ting;Tseng, Yi-Ting;Chang, Yao-Feng;Chen, Ying-Chen;Huang, Hui-Chun;Sze, Simon M. |
| 2013 |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current |
Su, Yu-Ting;Chang, Kuan-Chang;Chang, Ting-Chang;Tsai, Tsung-Ming;Zhang, Rui;Lou, J. C.;Chen, Jung-Hui;Young, Tai-Fa;Chen, Kai-Huang;Tseng, Bae-Heng;Shih, Chih-Cheng;Yang, Ya-Liang;Chen, Min-Chen;Chu, Tian-Jian;Pan, Chih-Hung;Syu, Yong-En;Sze, Simon M. |
| 2017 |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory |
Wu, Cheng-Hsien;Chang, Ting-Chang;Tsai, Tsung-Ming;Chang, Kuan-Chang;Chu, Tian-Jian;Pan, Chih-Hung;Su, Yu-Ting;Chen, Po-Hsun;Lin, Shih-Kai;Hu, Shih-Jie;Sze, Simon M. |
| 2017 |
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications |
Chen, Po-Hsun;Chang, Ting-Chang;Chang, Kuan-Chang;Tsai, Tsung-Ming;Pan, Chih-Hung;Shih, Chih-Cheng;Wu, Cheng-Hsien;Yang, Chih-Cheng;Chen, Wen-Chung;Lin, Jiun-Chiu;Wang, Ming-Hui;Zheng, Hao-Xuan;Chen, Min-Chen;Sze, Simon M. |
| 2013 |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device |
Syu, Yong-En;Zhang, Rui;Chang, Ting-Chang;Tsai, Tsung-Ming;Chang, Kuan-Chang;Lou, Jen-Chung;Young, Tai-Fa;Chen, Jung-Hui;Chen, Min-Chen;Yang, Ya-Liang;Shih, Chih-Cheng;Chu, Tian-Jian;Chen, Jian-Yu;Pan, Chih-Hung;Su, Yu-Ting;Huang, Hui-Chun;Gan, Der-Shin;Sze, Simon M. |
| 2013 |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory |
Zhang, Rui;Chang, Kuan-Chang;Chang, Ting-Chang;Tsai, Tsung-Ming;Chen, Kai-Huang;Lou, Jen-Chung;Chen, Jung-Hui;Young, Tai-Fa;Shih, Chih-Cheng;Yang, Ya-Liang;Pan, Yin-Chih;Chu, Tian-Jian;Huang, Syuan-Yong;Pan, Chih-Hung;Su, Yu-Ting;Syu, Yong-En;Sze, Simon M. |
| 2013 |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment |
Chang, Kuan-Chang;Pan, Chih-Hung;Chang, Ting-Chang;Tsai, Tsung-Ming;Zhang, Rui;Lou, Jen-Chung;Young, Tai-Fa;Chen, Jung-Hui;Shih, Chih-Cheng;Chu, Tian-Jian;Chen, Jian-Yu;Su, Yu-Ting;Jiang, Jhao-Ping;Chen, Kai-Huang;Huang, Hui-Chun;Syu, Yong-En;Gan, Der-Shin;Sze, Simon M. |
| 2017 |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory |
Wu, Cheng-Hsien;Pan, Chih-Hung;Chen, Po-Hsun;Chang, Ting-Chang;Tsai, Tsung-Ming;Chang, Kuan-Chang;Shih, Chih-Cheng;Chi, Ting-Yang;Chu, Tian-Jian;Wu, Jia-Ji;Du, Xiaoqin;Zheng, Hao-Xuan;Sze, Simon M. |
| 2015 |
Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment |
Chen, Ji;Lou, Jen-Chung;Chang, Kuan-Chang;Chang, Ting-Chang;Tsai, Tsung-Ming;Pan, Chih-Hung |
| 2015 |
Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment |
Chen, Ji;Lou, Jen-Chung;Chang, Kuan-Chang;Chang, Ting-Chang;Tsai, Tsung-Ming;Pan, Chih-Hung |
| 2015 |
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment |
Chen, Ji;Chang, Kuan-Chang;Chang, Ting-Chang;Tsai, Tsung-Ming;Pan, Chih-Hung;Zhang, Rui;Lou, Jen-Chung;Chu, Tian-Jian;Wu, Cheng-Hsien;Chen, Min-Chen;Hung, Ya-Chi;Syu, Yong-En;Zheng, Jin-Cheng;Sze, Simon M. |
| 2013 |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices |
Chang, Kuan-Chang;Zhang, Rui;Chang, Ting-Chang;Tsai, Tsung-Ming;Lou, J. C.;Chen, Jung-Hui;Young, Tai-Fa;Chen, Min-Chen;Yang, Ya-Liang;Pan, Yin-Chih;Chang, Geng-Wei;Chu, Tian-Jian;Shih, Chih-Cheng;Chen, Jian-Yu;Pan, Chih-Hung;Su, Yu-Ting;Syu, Yong-En;Tai, Ya-Hsiang;Sze, Simon M. |
| 2017 |
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment |
Du, Xiaoqin;Wu, Xiaojing;Chang, Ting-Chang;Chang, Kuan-Chang;Pan, Chih-Hung;Wu, Cheng-Hsien;Lin, Yu-Shuo;Chen, Po-Hsun;Zhang, Shengdong;Sze, Simon M. |
| 2016 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory |
Tsai, Tsung-Ming;Chang, Kuan-Chang;Chang, Ting-Chang;Zhang, Rui;Wang, Tong;Pan, Chih-Hung;Chen, Kai-Huang;Chen, Hua-Mao;Chen, Min-Chen;Tseng, Yi-Ting;Chen, Po-Hsun;Lo, Ikai;Zheng, Jin-Cheng;Lou, Jen-Chung;Sze, Simon M. |
