| Issue Date | Title | Author(s) |
| 2013 | Characteristics of hafnium oxide resistance random access memory with different setting compliance current | Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
| 2014 | Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory | Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Chen, Kai-Huang; Zhang, Rui; Wang, Zhi-Yang; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chu, Tian-Jian; Huang, Syuan-Yong; Syu, Yong-En; Bao, Ding-Hua; Sze, Simon M. |
| 2017 | Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory | Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 2013 | Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process | Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 2013 | Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device | Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 2013 | High performance of graphene oxide-doped silicon oxide-based resistance random access memory | Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 2013 | Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment | Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 2014 | Hydrogen induced redox mechanism in amorphous carbon resistive random access memory | Chen, Yi-Jiun; Chen, Hsin-Lu; Young, Tai-Fa; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Lou, Jen-Chung; Chu, Tian-Jian; Chen, Jung-Hui; Bao, Ding-Hua; Sze, Simon M. |
| 2014 | Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment | Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei |
| Dec-2021 | Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment (vol 85, pg 183, 2014) | Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei |
| 2017 | Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory | Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 2015 | Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment | Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 2013 | Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices | Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
| 2014 | Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor | Chen, Yi-Jiun; Chang, Kuan-Chang; Chang, Ting-Chang; Chen, Hsin-Lu; Young, Tai-Fa; Tsai, Tsung-Ming; Zhang, Rui; Chu, Tian-Jian; Ciou, Jian-Fa; Lou, Jen-Chung; Chen, Kai-Huang; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. |
| 2014 | Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory | Shih, Chih-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chen, Jung-Hui; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Lou, Jen-Chung; Chu, Tian-Jian; Huang, Syuan-Yong; Bao, Ding-Hua; Sze, Simon M. |
| 2014 | Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory | Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
