Title Characteristics of hafnium oxide resistance random access memory with different setting compliance current
Authors Su, Yu-Ting
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Zhang, Rui
Lou, J. C.
Chen, Jung-Hui
Young, Tai-Fa
Chen, Kai-Huang
Tseng, Bae-Heng
Shih, Chih-Cheng
Yang, Ya-Liang
Chen, Min-Chen
Chu, Tian-Jian
Pan, Chih-Hung
Syu, Yong-En
Sze, Simon M.
Affiliation Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.
Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan.
Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan.
Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China.
Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung, Taiwan.
Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 80424, Taiwan.
Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan.
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan.
Keywords CO2 FLUID TREATMENT
HOPPING CONDUCTION
RRAM
IMPROVEMENT
MECHANISMS
DEVICES
ORIGIN
Issue Date 2013
Publisher 应用物理学快报
Citation APPLIED PHYSICS LETTERS.2013,103,(16).
Abstract In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
URI http://hdl.handle.net/20.500.11897/220016
ISSN 0003-6951
DOI 10.1063/1.4825104
Indexed SCI(E)
EI
Appears in Collections: 软件与微电子学院

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