Showing results 1 to 20 of 85
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| Issue Date | Title | Author(s) |
| 2017 | Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs | Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Li-Hui; Lin, Yu-Shan; Liu, Xi-Wen; Liao, Jih-Chien; Lin, Chien-Yu; Lien, Chen-Hsin; Chang, Kuan-Chang; Zhang, Sheng-Dong |
| 5-May-2024 | Accelerating B-site cation ordering-disordering transition and improving dielectric properties of Ba(Co,Zn)<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub> complex perovskite microwave ceramics by CuO doping | Li, Hao; Liu, Fei; Chang, Kuan-Chang; Lin, Xinnan; Liu, Shaojun |
| Jul-2021 | Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation | Li, Lei; Dai, Tianjiao; Liu, Kai; Chang, Kuan-Chang; Zhang, Rui; Lin, Xinnan; Liu, Heng-Jui; Lai, Ying-Chih; Kuo, Tzu-Peng |
| 1-Aug-2022 | All-HKMG-bounded SCR for advanced ESD protection in 14 nm FinFET technology | Du, Feibo; Xie, Tiantian; Wang, Jun; Chang, Kuan-Chang; Lin, Xinnan; Hou, Fei; Chen, Ruibo; Han, Aoran; Liu, Zhiwei |
| Mar-2022 | Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment | Zhang, Jiaona; Zhang, Min; Chang, Kuan-Chang; Rong, Zhao; Zhang, Yuqing; Zhang, Shengdong; Chan, Mansun |
| 2017 | Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs | Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Chen, Li-Hui; Tsai, Jyun-Yu; Chen, Ching-En; Lu, Ying-Hsin; Liu, Hsi-Wen; Liao, Jin-Chien; Chang, Kuan-Chang |
| 2017 | Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode | Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
| Aug-2021 | Bifunctional homologous alkali-metal artificial synapse with regenerative ability and mechanism imitation of voltage-gated ion channels | Li, Lei; Hu, Luodan; Liu, Kai; Chang, Kuan-Chang; Zhang, Rui; Lin, Xinnan; Zhang, Shengdong; Huang, Pei; Liu, Heng-Jui; Kuo, Tzu-Peng |
| 2013 | Characteristics of hafnium oxide resistance random access memory with different setting compliance current | Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
| 2014 | Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory | Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. |
| Apr-2022 | Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering | Du, Feibo; Chang, Kuan-Chang; Lin, Xinnan; Hou, Fei; Zhang, Yuxin; Han, Aoran; Luo, Xun; Liu, Zhiwei |
| 31-Oct-2023 | Computational-fitting method for mobility extraction in GaN HEMT | Chang, Kuan-Chang; Feng, Xibei; Liu, Huangbai; Liu, Kai; Lin, Xinnan; Li, Lei |
| 2017 | Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment | Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M. |
| 2014 | Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation | Huang, Xuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Huang, Syuan-Yong; Chen, Kai-Huang; Chen, Jung-Hui; Wang, Huei-Jruan; Chen, Wen-Jen; Zhang, Fengyan; Chen, Chao; Sze, Simon M. |
| Jan-2021 | Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors | Li, Mengjiao; Cheng, Wei-Yuan; Li, Yi-Chiun; Wu, Hsing-Mei; Wu, Yan-Cheng; Lu, Hong-Wei; Cheng, Shueh-Lian; Li, Lei; Chang, Kuan-Chang; Liu, Heng-Jui; Lin, Yen-Fu; Lin, Lu-Yin; Lai, Ying-Chih |
| 2014 | Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory | Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Chen, Kai-Huang; Zhang, Rui; Wang, Zhi-Yang; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chu, Tian-Jian; Huang, Syuan-Yong; Syu, Yong-En; Bao, Ding-Hua; Sze, Simon M. |
| 22-Nov-2021 | Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube | Chang, Kuan-Chang; Zhou, Qian; Liu, Kai; Li, Lei; Zhang, Rui; Liu, Heng-Jui; Kuo, Tzu-Peng |
| 2017 | The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors | Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 2017 | The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017) | Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 2017 | Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory | Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
