| Issue Date |
Title |
Author(s) |
| 2018 |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM |
Wu, Cheng-Hsien;Lin, Shih-Kai;Pan, Chih-Hung;Chen, Po-Hsun;Lin, Wen-Yan;Chang, Ting-Chang;Tsai, Tsung-Ming;Xu, You-Lin;Shih, Chih-Cheng;Lin, Yu-Shuo;Chen, Wen-Chung;Wang, Ming-Hui;Zhang, Sheng-Dong;Sze, Simon M. |
| 2017 |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode |
Lin, Chih-Yang;Chen, Po-Hsun;Chang, Ting-Chang;Chang, Kuan-Chang;Zhang, Sheng-Dong;Tsai, Tsung-Ming;Pan, Chih-Hung;Chen, Min-Chen;Su, Yu-Ting;Tseng, Yi-Ting;Chang, Yao-Feng;Chen, Ying-Chen;Huang, Hui-Chun;Sze, Simon M. |
| 2017 |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory |
Wu, Cheng-Hsien;Chang, Ting-Chang;Tsai, Tsung-Ming;Chang, Kuan-Chang;Chu, Tian-Jian;Pan, Chih-Hung;Su, Yu-Ting;Chen, Po-Hsun;Lin, Shih-Kai;Hu, Shih-Jie;Sze, Simon M. |
| 2017 |
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications |
Chen, Po-Hsun;Chang, Ting-Chang;Chang, Kuan-Chang;Tsai, Tsung-Ming;Pan, Chih-Hung;Shih, Chih-Cheng;Wu, Cheng-Hsien;Yang, Chih-Cheng;Chen, Wen-Chung;Lin, Jiun-Chiu;Wang, Ming-Hui;Zheng, Hao-Xuan;Chen, Min-Chen;Sze, Simon M. |
| 2019 |
Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2 mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors |
Huang, Shin-Ping;Zheng, Yu-Zhe;Chang, Ting-Chang;Chen, Bo-Wei;Chen, Po-Hsun;Chu, Ann-Kuo;Chen, Hong-Chih;Tsao, Yu-Ching;Chen, Min-Chen;Chen, Wei-Han;Wang, Terry Tai-Jui;Kanicki, Jerzy;Zhang, Sheng-Dong |
| 2018 |
Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High- Permittivity Ta2O5 Side Wall |
Yuan, Mei;Tseng, Yi-Ting;Chen, Po-Hsun;Shih, Chih-Cheng;Huang, Hui-Chun;Chang, Ting-Chang;Cui, Xiaole;Lin, Xinnan;Zhang, Shengdong;Zhou, Hang |
| 2017 |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory |
Wu, Cheng-Hsien;Pan, Chih-Hung;Chen, Po-Hsun;Chang, Ting-Chang;Tsai, Tsung-Ming;Chang, Kuan-Chang;Shih, Chih-Cheng;Chi, Ting-Yang;Chu, Tian-Jian;Wu, Jia-Ji;Du, Xiaoqin;Zheng, Hao-Xuan;Sze, Simon M. |
| 2017 |
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment |
Du, Xiaoqin;Wu, Xiaojing;Chang, Ting-Chang;Chang, Kuan-Chang;Pan, Chih-Hung;Wu, Cheng-Hsien;Lin, Yu-Shuo;Chen, Po-Hsun;Zhang, Shengdong;Sze, Simon M. |
| 2016 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory |
Tsai, Tsung-Ming;Chang, Kuan-Chang;Chang, Ting-Chang;Zhang, Rui;Wang, Tong;Pan, Chih-Hung;Chen, Kai-Huang;Chen, Hua-Mao;Chen, Min-Chen;Tseng, Yi-Ting;Chen, Po-Hsun;Lo, Ikai;Zheng, Jin-Cheng;Lou, Jen-Chung;Sze, Simon M. |
| 2017 |
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure |
Tseng, Yi-Ting;Chen, Po-Hsun;Chang, Ting-Chang;Chang, Kuan-Chang;Tsai, Tsung-Ming;Shih, Chih-Cheng;Huang, Hui-Chun;Yang, Cheng-Chi;Lin, Chih-Yang;Wu, Cheng-Hsien;Zheng, Hao-Xuan;Zhang, Shengdong;Sze, Simon M. |
| 2017 |
Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic |
Chen, Hsin-Lu;Chen, Po-Hsun;Chang, Ting-Chang;Young, Tai-Fa;Wang, Min-Chuan;Ai, Chi-Fong;Tsai, Tsung-Ming;Chang, Kuan-Chang;Chen, Min-Chen;Su, Yu-Ting;Yang, Chih-Cheng;Lin, Chun-Chu |
