| Title | Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory |
| Authors | Wu, Cheng-Hsien Pan, Chih-Hung Chen, Po-Hsun Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Shih, Chih-Cheng Chi, Ting-Yang Chu, Tian-Jian Wu, Jia-Ji Du, Xiaoqin Zheng, Hao-Xuan Sze, Simon M. |
| Affiliation | Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan. Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan. Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan. Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China. Hubei Univ, Fac Phys & Elect Sci, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Hubei Key Lab Ferroelect & Dielect Mat & Devices, Wuhan 430062, Hubei, Peoples R China. Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China. Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan. Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan. Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan. Chang, TC (reprint author), Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan. |
| Keywords | INDIUM-TIN-OXIDE METAL-OXIDES RRAM IMPROVEMENT OXIDATION |
| Issue Date | 2017 |
| Publisher | APPLIED PHYSICS EXPRESS |
| Citation | APPLIED PHYSICS EXPRESS.2017,10(9). |
| Abstract | In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics |
| URI | http://hdl.handle.net/20.500.11897/471121 |
| ISSN | 1882-0778 |
| DOI | 10.7567/APEX.10.094102 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息工程学院 |
