| Title | Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment |
| Authors | Chen, Ji Chang, Kuan-Chang Chang, Ting-Chang Tsai, Tsung-Ming Pan, Chih-Hung Zhang, Rui Lou, Jen-Chung Chu, Tian-Jian Wu, Cheng-Hsien Chen, Min-Chen Hung, Ya-Chi Syu, Yong-En Zheng, Jin-Cheng Sze, Simon M. |
| Affiliation | Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China. Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan. Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan. Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan. China Natl Petr Cooperat, Bur Geophys Prospecting, Ctr Informat Technol, Beijing 100007, Peoples R China. Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan. |
| Keywords | RRAM nitrogen buffering effect electric field force NH3 treatment SUPERCRITICAL CO2 FLUID SWITCHING MEMORY RESISTANCE IMPROVEMENT RRAM MECHANISM UNIFORMITY CONDUCTION DEVICE |
| Issue Date | 2015 |
| Publisher | IEEE ELECTRON DEVICE LETTERS |
| Citation | IEEE ELECTRON DEVICE LETTERS.2015,36,(11),1138-1141. |
| Abstract | In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance. |
| URI | http://hdl.handle.net/20.500.11897/415375 |
| ISSN | 0741-3106 |
| DOI | 10.1109/LED.2015.2477163 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 软件与微电子学院 |
