Browsing by Author Guo, Shaofeng

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Issue Date Title Author(s)
2017 Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps Guo, Shaofeng;Wang, Runsheng;Mao, Dongyuan;Wang, Yangyuan;Huang, Ru
Dec-2020 Circuit Reliability Comparison Between Stochastic Computing and Binary Computing Zhang, Zuodong;Wang, Runsheng;Zhang, Zhe;Zhang, Yawen;Guo, Shaofeng;Huang, Ru
2014 Compact Modeling of Random Telegraph Noise in Nanoscale MOSFETs and Impacts on Digital Circuits Luo, Mulong;Wang, Runsheng;Wang, Jing;Guo, Shaofeng;Zou, Jibin;Huang, Ru
2017 Comparative Study on RTN Amplitude in Planar and FinFET Devices Zhang, Zexuan;Zhang, Zhe;Guo, Shaofeng;Wang, Runsheng;Wang, Xingsheng;Cheng, Binjie;Asenov, Asen;Huang, Ru
2018 Complex Random Telegraph Noise (RTN): What Do We Understand? Wang, Runsheng;Guo, Shaofeng;Zhang, Zexuan;Zou, Jibin;Mao, Dongyuan;Huang, Ru
2016 Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability Mao, Dongyuan;Guo, Shaofeng;Wang, Runsheng;Luo, Mulong;Huang, Ru
2016 Deep understanding of random telegraph noise (RTN) effects on SRAM stability Mao, Dongyuan;Guo, Shaofeng;Wang, Runsheng;Luo, Mulong;Huang, Ru
2017 Design Guidelines of Stochastic Computing Based on FinFET: A Technology-Circuit Perspective Zhang, Yawen;Wang, Runsheng;Jiang, Xiaobo;Lin, Zhenghan;Guo, Shaofeng;Zhang, Zhe;Zhang, Zherui;Huang, Ru
2018 Design guidelines of stochastic computing based on FinFET: A technology-circuit perspective Zhang, Yawen;Wang, Runsheng;Jiang, Xiaobo;Lin, Zhenghan;Guo, Shaofeng;Zhang, Zhe;Zhang, Zherui;Huang, Ru
2016 A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology Jiang, Xiaobo;Guo, Shaofeng;Wang, Runsheng;Wang, Xingsheng;Cheng, Binjie;Asenov, Asen;Huang, Ru
2015 DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design Guo, Shaofeng;Huang, Ru;Hao, Peng;Luo, Mulong;Ren, Pengpeng;Wang, Jianping;Bu, Weihai;Wu, Jingang;Wong, Waisum;Yu, Scott;Wu, Hanming;Lee, Shiuh-Wuu;Wang, Runsheng;Wang, Yangyuan
2018 Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method Guo, Shaofeng;Lin, Zhenghan;Wang, Runsheng;Mao, Dongyuan;Wang, Yangyuan;Huang, Ru
2018 Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): Physical understanding and prediction method Guo, Shaofeng;Lin, Zhenghan;Wang, Runsheng;Mao, Dongyuan;Wang, Yangyuan;Huang, Ru
2018 Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization Zhang, Zhe;Jiang, Xiaobo;Wang, Runsheng;Guo, Shaofeng;Wang, Yangyuan;Huang, Ru
2016 Geochronological and geochemical studies of the metasedimentary rocks and diabase from the Jingtieshan deposit, North Qilian, NW China: Constraints on the associated banded iron formations Yang, Xiuqing;Zhang, Zuoheng;Guo, Shaofeng;Chen, Jie;Wang, Dachuan
2017 How Close to the CMOS Voltage Scaling Limit for FinFET Technology? - Near-Threshold Computing and Stochastic Computing Wang, Runsheng;Jiang, Xiaobo;Guo, Shaofeng;Huang, Ru
2018 How close to the CMOS voltage scaling limit for FinFET technology? - Near-threshold computing and stochastic computing Wang, Runsheng;Jiang, Xiaobo;Guo, Shaofeng;Huang, Ru
2016 Impacts of Metastable Defect States on Gate Oxide Trapping in Nanoscale MOS Devices Mao, Dongyuan;Guo, Shaofeng;Wang, Runsheng;Huang, Ru;Liu, Changze
2015 Impacts of Random Telegraph Noise (RTN) on Digital Circuits Luo, Mulong;Wang, Runsheng;Guo, Shaofeng;Wang, Jing;Zou, Jibin;Huang, Ru
2016 IMPACTS OF RANDOM TELEGRAPH NOISE (RTN) ON THE ENERGY DELAY TRADEOFFS OF LOGIC CIRCUITS Zhang, Yang;Jiang, Xiaobo;Wang, Junyao;Guo, Shaofeng;Fang, Yichen;Wang, Runsheng;Luo, Mulong;Huang, Ru
Showing results 1 to 20 of 54 next >