Browsing by Author Jiang, Xiaobo

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Issue Date Title Author(s)
2018 A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET Technology Zhang, Zhe;Wang, Runsheng;Jiang, Xiaobo;Wang, Xingsheng;Wang, Yangyuan;Huang, Ru
2017 Design Guidelines of Stochastic Computing Based on FinFET: A Technology-Circuit Perspective Zhang, Yawen;Wang, Runsheng;Jiang, Xiaobo;Lin, Zhenghan;Guo, Shaofeng;Zhang, Zhe;Zhang, Zherui;Huang, Ru
2018 Design guidelines of stochastic computing based on FinFET: A technology-circuit perspective Zhang, Yawen;Wang, Runsheng;Jiang, Xiaobo;Lin, Zhenghan;Guo, Shaofeng;Zhang, Zhe;Zhang, Zherui;Huang, Ru
2016 A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology Jiang, Xiaobo;Guo, Shaofeng;Wang, Runsheng;Wang, Xingsheng;Cheng, Binjie;Asenov, Asen;Huang, Ru
2014 Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics Ren, Pengpeng;Wang, Runsheng;Jiang, Xiaobo;Qiu, Yingxin;Liu, Changze;Huang, Ru
2018 Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization Zhang, Zhe;Jiang, Xiaobo;Wang, Runsheng;Guo, Shaofeng;Wang, Yangyuan;Huang, Ru
2017 How Close to the CMOS Voltage Scaling Limit for FinFET Technology? - Near-Threshold Computing and Stochastic Computing Wang, Runsheng;Jiang, Xiaobo;Guo, Shaofeng;Huang, Ru
2018 How close to the CMOS voltage scaling limit for FinFET technology? - Near-threshold computing and stochastic computing Wang, Runsheng;Jiang, Xiaobo;Guo, Shaofeng;Huang, Ru
2016 IMPACTS OF RANDOM TELEGRAPH NOISE (RTN) ON THE ENERGY DELAY TRADEOFFS OF LOGIC CIRCUITS Zhang, Yang;Jiang, Xiaobo;Wang, Junyao;Guo, Shaofeng;Fang, Yichen;Wang, Runsheng;Luo, Mulong;Huang, Ru
2016 Impacts of random telegraph noise (RTN) on the Energy-Delay tradeoffs of logic circuits Zhang, Yang;Jiang, Xiaobo;Wang, Junyao;Guo, Shaofeng;Fang, Yichen;Wang, Runsheng;Luo, Mulong;Huang, Ru
1-Jul-2021 Improving the short-term frequency stability of a magnetic-state-selected cesium beam clock with optical detection Liu, Chang;Chen, Sifei;Chen, Ziyu;Li, Lingxiang;Xu, Shaohang;Li, Yining;Wang, Jiale;Wang, Yanhui;Hou, Shimin;Zhang, Jun;Dong, Richang;Jiang, Xiaobo
2018 Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits Guo, Shaofeng;Wang, Runsheng;Ren, Pengpeng;Liu, Changze;Luo, Mulong;Jiang, Xiaobo;Wang, Yangyuan;Huang, Ru
2016 Investigation on the Amplitude Distribution of Random Telegraph Noise (RTN) in Nanoscale MOS Devices Zhang, Zexuan;Guo, Shaofeng;Jiang, Xiaobo;Wang, Runsheng;Huang, Ru;Zou, Jibin
2017 Investigation on the V-dd Scaling Limit of Stochastic Computing Circuits based on FinFET Technology Jiang, Xiaobo;Wang, Runsheng;Guo, Shaofeng;Huang, Ru
2013 Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method Jiang, Xiaobo;Wang, Runsheng;Yu, Tao;Chen, Jiang;Huang, Ru
2013 Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability Wang, Runsheng;Jiang, Xiaobo;Yu, Tao;Fan, Jiewen;Chen, Jiang;Pan, David Z.;Huang, Ru
2012 Investigations on the Correlation between Line-edge-roughness (LER) and Line-width-roughness (LWR) in Nanoscale CMOS Technology Jiang, Xiaobo;Li, Meng;Wang, Runsheng;Chen, Jiang;Huang, Ru
2016 New Approach for Understanding "Random Device Physics" from Channel Percolation Perspectives: Statistical Simulations, Key Factors and Experimental Results Zhang, Zhe;Zhang, Zexuan;Wang, Runsheng;Jiang, Xiaobo;Guo, Shaofeng;Wang, Yangyuan;Wang, Xingsheng;Cheng, Binjie;Asenov, Asen;Huang, Ru
2015 New Assessment Methodology Based on Energy-Delay-Yield Cooptimization for Nanoscale CMOS Technology Jiang, Xiaobo;Wang, Junyao;Wang, Xingsheng;Wang, Runsheng;Cheng, Binjie;Asenov, Asen;Wei, Lan;Huang, Ru
2017 New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices Zhang, Zexuan;Guo, Shaofeng;Jiang, Xiaobo;Wang, Runsheng;Zhang, Zhe;Hao, Peng;Wang, Yangyuan;Huang, Ru
Showing results 1 to 20 of 31 next >