| Title | New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits |
| Authors | Zou, Jibin Wang, Runsheng Guo, Shaofeng Luo, Mulong Yu, Zhuoqing Jiang, Xiaobo Ren, Pengpeng Wang, Jianping Liu, Jinhua Wu, Jingang Wong, Waisum Yu, Shaofeng Wu, Hanming Lee, Shiuh-Wuu Wang, Yangyuan Huang, Ru |
| Affiliation | Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, China Semiconductor Manufacturing International Corporation (SMIC), Shanghai, China Semiconductor Manufacturing International Corporation (SMIC), Beijing, China Innovation Center for MicroNanoelectronics and Integrated System, Beijing, China |
| Issue Date | 2015 |
| Publisher | 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 |
| Citation | 2014 60th IEEE International Electron Devices Meeting, IEDM 2014.San Francisco, CA, United states,2015/2/20,2015-February(34.5.1-34.5.4). |
| Abstract | In this paper, the statistical characteristics of complex RTN (both DC and AC) are experimentally studied for the first time, rather than limited case-by-case studies. It is found that, over 50% of RTN-states predicted by conventional theory are lost in actual complex RTN statistics. Based on the mechanisms of non-negligible trap interactions, new models are proposed, which successfully interpret this state-loss behavior, as well as the different complex RTN characteristics in SiON and high-?? devices. The circuit-level study also indicates that, predicting circuit stability would have large errors if not taking into account the trap interactions and RTN state-loss. The results are helpful for the robust circuit design against RTN. ? 2014 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/423579 |
| DOI | 10.1109/IEDM.2014.7047169 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
