| Issue Date | Title | Author(s) |
| 2018 | Body Bias Dependence of Hot Carrier Degradation (HCD) in Advanced FinFET Technology | Zhang, Jiayang; Sun, Zixuan; Wang, Runsheng; Yu, Zhuoqing; Ren, Pengpeng; Huang, Ru |
| Nov-2023 | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range | Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Chasin, Adrian; Ben Kaczer |
| 2019 | High-speed black phosphorus field-effect transistors approaching ballistic limit | Li, Xuefei; Yu, Zhuoqing; Xiong, Xiong; Li, Tiaoyang; Gao, Tingting; Wang, Runsheng; Huang, Ru; Wu, Yanqing |
| Apr-2020 | Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling | Yu, Zhuoqing; Sun, Zixuan; Wang, Runsheng; Zhang, Jiayang; Huang, Ru |
| 2018 | Investigation of DIBL Degradation in Nanoscale FinFETs under Various Hot Carrier Stresses | Sun, Zixuan; Yu, Zhuoqing; Wang, Runsheng; Zhang, Jiayang; Zhang, Zhe; Lu, Peimin; Huang, Ru |
| 2019 | Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress | Sun, Zixuan; Yu, Zhuoqing; Zhang, Zhe; Zhang, Jiayang; Wang, Runsheng; Lu, Peimin; Huang, Ru |
| 2014 | New Efficient Method for Characterizing Time Constants of Switching Oxide Traps | Guo, Shaofeng; Ren, Pengpeng; Wang, Runsheng; Yu, Zhuoqing; Luo, Mulong; Zhang, Xing; Huang, Ru |
| 2014 | A new efficient method for characterizing time constants of switching oxide traps | Guo, Shaofeng; Ren, Pengpeng; Wang, Runsheng; Yu, Zhuoqing; Luo, Mulong; Zhang, Xing; Huang, Ru |
| 2018 | New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology | Ren, Pengpeng; Liu, Changze; Wan, Sanping; Zhang, Jiayang; Yu, Zhuoqing; Liu, Nie; Sun, Yongsheng; Wang, Runsheng; Zhan, Canhui; Gan, Zhenghao; Wong, Waisum; Xia, Yu; Huang, Ru |
| 2017 | New Insights into the Hot Carrier Degradation (HCD) in FinFET: New Observations, Unified Compact Model, and Impacts on Circuit Reliability | Yu, Zhuoqing; Zhang, Jiayang; Wang, Runsheng; Guo, Shaofeng; Liu, Changze; Huang, Ru |
| 2018 | New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability | Yu, Zhuoqing; Zhang, Jiayang; Wang, Runsheng; Guo, Shaofeng; Liu, Changze; Huang, Ru |
| 2017 | New Observations on the Two-Stage Degradation of Hot Carrier Reliability in High-k/Metal-gate MOSFETs | Yu, Zhuoqing; Guo, Shaofeng; Wang, Runsheng; Hao, Peng; Huang, Ru |
| 2015 | New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits | Zou, Jibin; Wang, Runsheng; Guo, Shaofeng; Luo, Mulong; Yu, Zhuoqing; Jiang, Xiaobo; Ren, Pengpeng; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru |
| 2018 | Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings | Yu, Zhuoqing; Wang, Runsheng; Hao, Peng; Guo, Shaofeng; Ren, Pengpeng; Huang, Ru |
| Jul-2020 | On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD) | Yu, Zhuoqing; Zhang, Zhe; Sun, Zixuan; Wang, Runsheng; Huang, Ru |
| 2017 | Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology - New-Generation Aging Model and Circuit Reliability Simulator | Guo, Shaofeng; Wang, Runsheng; Yu, Zhuoqing; Hao, Peng; Ren, Pengpeng; Wang, Yangyuan; Liao, Siyu; Huang, Chunyi; Guo, Tianlei; Chen, Alvin; Xie, Jushan; Huang, Ru |
| 2021 | Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach | Wang, Runsheng; Sun, Zixuan; Liu, Yue-Yang; Yu, Zhuoqing; Wang, Zirui; Jiang, Xiangwei; Huang, Ru |
