| Issue Date | Title | Author(s) |
| 2015 | Adding the Missing Time-Dependent Layout Dependency into Device-Circuit-Layout Co-Optimization -New Findings on the Layout Dependent Aging Effects | Ren, Pengpeng; Xu, Xiaoqing; Hao, Peng; Wang, Junyao; Wang, Runsheng; Li, Ming; Wang, Jianping; Bu, Weihai; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Pan, David Z.; Huang, Ru |
| 2016 | Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization-New findings on the layout dependent aging effects | Ren, Pengpeng; Xu, Xiaoqing; Hao, Peng; Wang, Junyao; Wang, Runsheng; Li, Ming; Wang, Jianping; Bu, Weihai; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Pan, David Z.; Huang, Ru |
| 2013 | Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits | Zou, Jibin; Wang, Runsheng; Luo, Mulong; Huang, Ru; Xu, Nuo; Ren, Pengpeng; Liu, Changze; Xiong, Weize; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2015 | DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design | Guo, Shaofeng; Huang, Ru; Hao, Peng; Luo, Mulong; Ren, Pengpeng; Wang, Jianping; Bu, Weihai; Wu, Jingang; Wong, Waisum; Yu, Scott; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Runsheng; Wang, Yangyuan |
| 2015 | First Foundry Platform of Complementary Tunnel-FETs in CMOS Baseline Technology for Ultralow-Power IoT Applications: Manufacturability, Variability and Technology Roadmap | Huang, Qianqian; Jia, Rundong; Chen, Cheng; Zhu, Hao; Guo, Lingyi; Wang, Junyao; Wang, Jiaxin; Wu, Chunlei; Wang, Runsheng; Bu, Weihai; Kang, Jing; Wang, Wenbo; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru |
| 2016 | First foundry platform of complementary tunnel-FETs in CMOS baseline technology for ultralow-power IoT applications: Manufacturability, variability and technology roadmap | Huang, Qianqian; Jia, Rundong; Chen, Cheng; Zhu, Hao; Guo, Lingyi; Wang, Junyao; Wang, Jiaxin; Wu, Chunlei; Wang, Runsheng; Bu, Weihai; Kang, Jing; Wang, Wenbo; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru |
| 2012 | New insights into AC RTN in scaled high-��/ metal-gate MOSFETs under digital circuit operations | Zou, Jibin; Wang, Runsheng; Gong, Nanbo; Huang, Ru; Xu, Xiaoqing; Ou, Jiaojiao; Liu, Changze; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Yu, Shaofeng; Ren, Pengpeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2015 | New insights into the design for end-of-life variability of NBTI in scaled high-��/metal-gate Technology for the nano-reliability era | Ren, Pengpeng; Wang, Runsheng; Ji, Zhigang; Hao, Peng; Jiang, Xiaobo; Guo, Shaofeng; Luo, Mulong; Duan, Meng; Zhang, Jian F.; Wang, Jianping; Liu, Jinhua; Bu, Weihai; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Xu, Nuo; Huang, Ru |
| 2012 | New Observations on AC NBTI induced Dynamic Variability in Scaled High-kappa/Metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits | Liu, Changze; Ren, Pengpeng; Wang, Runsheng; Huang, Ru; Ou, Jiaojiao; Huang, Qianqian; Zou, Jibin; Wang, Jianping; Wu, Jingang; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2012 | New observations on AC NBTI induced dynamic variability in scaled high-��/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits | Liu, Changze; Ren, Pengpeng; Wang, Runsheng; Huang, Ru; Ou, Jiaojiao; Huang, Qianqian; Zou, Jibin; Wang, Jianping; Wu, Jingang; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2013 | New Observations on Complex RTN in Scaled High-kappa/Metal-gate MOSFETs - the Role of Defect Coupling under DC/AC Condition | Ren, Pengpeng; Hao, Peng; Liu, Changze; Wang, Runsheng; Jiang, Xiaobo; Qin, Yingxin; Huang, Ru; Guo, Shaofeng; Luo, Mulong; Zou, Jibin; Li, Meng; Wang, Jianping; Wu, Jingang; Liu, Jinhua; Bu, Weihai; Wong, Waisum; Yu, Scott; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2013 | New observations on complex RTN in scaled high-��/metal-gate MOSFETs - The role of defect coupling under DC/AC condition | Ren, Pengpeng; Hao, Peng; Liu, Changze; Wang, Runsheng; Jiang, Xiaobo; Qiu, Yingxin; Huang, Ru; Guo, Shaofeng; Luo, Mulong; Zou, Jibin; Li, Meng; Wang, Jianping; Wu, Jingang; Liu, Jinhua; Bu, Weihai; Wong, Waisum; Yu, Scott; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
| 2015 | New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits | Zou, Jibin; Wang, Runsheng; Guo, Shaofeng; Luo, Mulong; Yu, Zhuoqing; Jiang, Xiaobo; Ren, Pengpeng; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Wong, Waisum; Yu, Shaofeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru |
| 2013 | A Unified Approach for Trap-Aware Device/Circuit Co-Design in Nanoscale CMOS Technology | Wang, Runsheng; Luo, Mulong; Guo, Shaofeng; Huang, Ru; Liu, Changze; Zou, Jibin; Wang, Jianping; Wu, Jingang; Xu, Nuo; Wong, Waisum; Yu, Scott; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan |
