Showing results 1 to 20 of 152
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| Issue Date | Title | Author(s) |
| 2011 | 3-D Numerical Simulation Study on 20 nm NMOSFET Design | Shi, Min; He, Jin; Liu, Zhiwei; Wang, Wenping; Zhao, Wei; Wang, Ruonan; Wu, Wen; Ma, Yong; Zhang, Dongwei; Bian, Wei; Chan, Mansun; Zhang, Xukai; Zhang, Lining |
| Feb-2023 | Adaptive Multioutput Gradient RBF Tracker for Nonlinear and Nonstationary Regression | Sun, Zixuan; Wang, Zirui; Wang, Runsheng; Zhang, Lining; Zhang, Jiayang; Zhang, Zuodong; Song, Jiahao; Wang, Da; Ji, Zhigang; Huang, Ru |
| 2016 | An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling Based on Artificial Neural Networks | Zhang, Zhiyuan; Cui, Xiaole; Lin, Xinnan; Zhang, Lining |
| 2009 | An Analytic Channel Potential Based Model for Dynamic Depletion Surrounding-Gate MOSFETs with Arbitrary Doping Level | Zhang, Lining; Zhang, Jian; Liu, Feng; Chen, Lin; Xu, Yiwen; Zhou, Wang; He, Frank |
| 2009 | An Analytic Model for Ge/Si Core/Shell Nanowire MOSFETs Considering Drift-Diffusion and Ballistic Transport | Zhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing |
| 2008 | An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure | Zhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing |
| 2009 | An Analytic Model of Silicon-based Nanowire Gated Field Effect Transistor Terahertz Signal Detection | Song, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin |
| 2009 | An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection | Song, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin |
| 2009 | An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET | Zhou, Xingye; Che, Yuchi; Zhang, Lining; He, Jin; Chan, Mansun |
| 2009 | Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects | Song, Yan; He, Jin; Zhang, Lining; Zhang, Jian |
| 2009 | Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects | Song, Yan; He, Jin; Zhang, Lining; Zhang, Jian |
| 2011 | Analytic potential model for asymmetricunderlap gate-all-around MOSFET | Wang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; Liu, Zhiwei; Wang, Guozeng; Zhang, Yang; Wu, Wen; Zhao, Xiaojin; Wang, Wenping; Cao, Yu; Ye, Yun; Wang, Ruonan; Ma, Yong; He, Jin |
| 2010 | Analytic potential solution for modeling the symmetric DG accumulation mode MOSFETs | Chen, Lin; Xu, Yiwen; Zhang, Lining; Zhou, Wang; He, Frank |
| 2008 | An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects | Hu, Jinhua; Zhang, Jian; Zhang, Lining; Liu, Feng; He, Jin |
| 2012 | An Analytical Charge Model for Double-Gate Tunnel FETs | Zhang, Lining; Lin, Xinnan; He, Jin; Chan, Mansun |
| 2016 | Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs | Lin, Xinnan; Zhang, Baili; Xiao, Ying; Lou, Haijun; Zhang, Lining; Chan, Mansun |
| 2010 | Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET | Zhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun |
| 2010 | Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET | Wang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; He, Frank; Chan, Mansun |
| 2009 | An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor | Chen, Yu; He, Jin; Mu, Xuehong; Lou, Haijun; Zhang, Lining; Song, Yan; Yang, Zhifeng; Zhu, Jinxuan; Cao, Juncheng |
| 2010 | Bandstructures of unstrained and strained silicon nanowire | Zhang, Lining; Lou, Haijun; Liu, Zhiwei; He, Frank; Chan, Mansun |
