| Title | An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET |
| Authors | Zhou, Xingye Che, Yuchi Zhang, Lining He, Jin Chan, Mansun |
| Affiliation | Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Micro & Nano Elect Device & Integrated Technol Ct, Shenzhen 518055, Peoples R China. Peking Univ, TSRC, Key Lab Microelect Devices & Circuits, Minist Educ,Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China. Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Peoples R China. |
| Keywords | SIMULATION |
| Issue Date | 2009 |
| Citation | NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING.. |
| Abstract | In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization. |
| URI | http://hdl.handle.net/20.500.11897/293248 |
| Indexed | EI CPCI-S(ISTP) |
| Appears in Collections: | 深圳研究生院待认领 信息科学技术学院 |
