| Title | An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection |
| Authors | Song, Yan Chen, Yu Mu, Xuehao Lou, Haijun Zhang, Lining He, Jin |
| Affiliation | Micro- and Nano Electronic Device and Integrated Technology Group, Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen, China |
| Issue Date | 2009 |
| Publisher | Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 |
| Citation | Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009.2009,3,363-366. |
| Abstract | An analytical terahertz (THz) signal detection model of the Silicon-based nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated. |
| URI | http://hdl.handle.net/20.500.11897/461531 |
| ISSN | 9781439817841 |
| Indexed | EI |
| Appears in Collections: | 深圳研究生院待认领 |
