| Title | Analytic potential model for asymmetricunderlap gate-all-around MOSFET |
| Authors | Wang, Shaodi Guo, Xinjie Zhang, Lining Zhang, Chenfei Liu, Zhiwei Wang, Guozeng Zhang, Yang Wu, Wen Zhao, Xiaojin Wang, Wenping Cao, Yu Ye, Yun Wang, Ruonan Ma, Yong He, Jin |
| Affiliation | Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University, Shenzhen 518055, China Peking University, Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China |
| Issue Date | 2011 |
| Citation | Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011.Boston, MA, United states,2(776-779). |
| Abstract | An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformai mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs' design. |
| URI | http://hdl.handle.net/20.500.11897/328646 |
| Indexed | EI |
| Appears in Collections: | 深圳研究生院待认领 |
