Browsing by Author Gong, Nanbo
Showing results 1 to 5 of 5
Issue Date |
Title |
Author(s) |
2019 |
Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics |
Zheng, Qilin;Wang, Zongwei;Gong, Nanbo;Yu, Zhizhen;Chen, Cheng;Cai, Yimao;Huang, Qianqian;Jiang, Hao;Xia, Qiangfei;Huang, Ru |
2013 |
Investigations on the Gate Oxide Dependence of AC RTN Characteristics in Nanoscaled MOSFETs: SiON vs. HfO2 |
Gong, Nanbo;Qiu, Yingxin;Wang, Runsheng;Zou, Jibin;Liu, Changze;Huang, Ru |
2012 |
New insights into AC RTN in scaled high-��/ metal-gate MOSFETs under digital circuit operations |
Zou, Jibin;Wang, Runsheng;Gong, Nanbo;Huang, Ru;Xu, Xiaoqing;Ou, Jiaojiao;Liu, Changze;Wang, Jianping;Liu, Jinhua;Wu, Jingang;Yu, Shaofeng;Ren, Pengpeng;Wu, Hanming;Lee, Shiuh-Wuu;Wang, Yangyuan |
2012 |
New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs |
Ren, Pengpeng;Liu, Changze;Wang, Runsheng;Gong, Nanbo;Liu, Jinhua;Wu, Hanming;Huang, Ru |
2012 |
On the AC Random Telegraph Noise (RTN) in MOS Devices: An Improved Multi-phonon based Model |
Gong, Nanbo;Wang, Runsheng;Liu, Changze;Zou, Jibin;Huang, Ru |