| Title | Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires |
| Authors | Sun, Xiaoxiao Wang, Xinqiang Wang, Ping Sheng, Bowen Li, Mo Su, Juan Zhang, Jian Liu, Fang Rong, Xin Xu, Fujun Yang, Xuelin Qin, Zhixin Ge, Weikun Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesosccop, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Microsyst & Terahertz Res Ctr, 596,Yinhe Rd, Chengdu 610200, Peoples R China. Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesosccop, Beijing 100871, Peoples R China. Wang, XQ (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | JUNCTION DIODE |
| Issue Date | 2017 |
| Publisher | OPTICAL MATERIALS EXPRESS |
| Citation | OPTICAL MATERIALS EXPRESS.2017,7(3),904-912. |
| Abstract | It remains a challenge to characterize the doping type in nanowires (NWs). We report in this paper a novel way to probe the doping type in GaN NWs by photoassisted kelvin probe force microscopy (KPFM), as a proper example showing that this approach is straight forward, effective and practical. Through illumination with super-bandgap light, photo-generated electrons in the n-region are swept away from the surface due to the electric field in the space-charge region, thus the holes move to the surface; while in contrast, electrons in the p-region will move to the surface. The fact that the quasi-Fermi level moves upwards in n-type while downwards in p-type identifies the doping type of GaN NWs, and is clearly revealed by the contact potential difference detected by photoassisted KPFM. (C) 2017 Optical Society of America |
| URI | http://hdl.handle.net/20.500.11897/474880 |
| ISSN | 2159-3930 |
| DOI | 10.1364/OME.7.000904 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 |
