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| Issue Date | Title | Author(s) |
| 2013 | 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates | Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin |
| 2014 | AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency | Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin |
| 28-Sep-2020 | Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires | Sheng, Bowen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Mueller, Marcus; Wang, Ping; Sun, Xiaoxiao; Qin, Zhixin; Shen, Bo; Wang, Xinqiang; Christen, Juergen |
| 2007 | Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off technique | Li, Rui; Chen, Weihua; Kang, Xiangning; Xu, Ke; Xu, Jun; Yang, Zhijian; Nie, Ruijuan; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi; Gan, Zizhao; Hu, Xiaodong |
| 2012 | Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaN | Yu, Feng; Chen, Zhizhong; Qi, Shengli; Wang, Suyuan; Jiang, Shuang; Fu, Xingxing; Jiang, Xianzhe; Yu, Tongjun; Qin, Zhixin; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi |
| 19-Apr-2021 | Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms | Wang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| Mar-2022 | Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition | Liu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo |
| 2019 | Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt | Wang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2009 | Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs | Huang, Liubing; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2009 | Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs | Huang, Liubing; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2008 | Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al(0.25)Ga(0.75)N/AlN/GaN heterostructures | Huang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2008 | Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures | Huang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2014 | Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes | Hou, Mengjun; Qin, Zhixin; He, Chenguang; Cai, Jun'an; Wang, Xinqiang; Shen, Bo |
| 2016 | Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy | He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2006 | Effects of annealing on the properties of the Mg-ion implanted p-GaN layer | Luo, Haojun; Hu, Chengyu; Yao, Shude; Qin, Zhixin |
| 2016 | Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact | Liu, Fang; Qin, Zhixin |
| 2007 | Elastic-plastic mechanical properties of AlxGa1-xN thin films with high Al composition | Xu, Fujun; Shen, Bo; Wang, Maojun; Xu, Jian; Miao, Zhenlin; Yang, Zhijian; Qin, Zhixin; Zhang, Guoyi; Lin, Bing; Bai, Shulin |
| 5-Feb-2024 | Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer | Fang, Xuzhou; Wang, Jiaming; Xu, Fujun; Zhang, Lisheng; Lang, Jing; Zhang, Ziyao; Tan, Fuyun; Yang, Xuelin; Kang, Xiangning; Qin, Zhixin; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2017 | Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy | Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Mueller, Mathias; August, Olga; Bertram, Frank; Christen, Juergen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2017 | Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells | Hou, Mengjun; Qin, Zhixin; Zhang, Lisheng; Han, Tianyang; Wang, Mingxing; Xu, Fujun; Wang, Xinqiang; Yu, Tongjun; Fang, Zheyu; Shen, Bo |
