| Issue Date |
Title |
Author(s) |
| 2009 |
1.53 mu m photo- and electroluminescence from Er3+ in erbium silicate |
Yin, Y.;Sun, K.;Xu, W. J.;Ran, G. Z.;Qin, G. G.;Wang, S. M.;Wang, C. Q. |
| 2010 |
1.54-mu m electroluminescence from Si-rich erbium silicate |
Ran, G. Z.;Yin, Y.;Wei, F.;Xu, W. J.;Qin, G. G. |
| 2008 |
Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect |
Liu, C.;Dai, L.;You, L. P.;Xu, W. J.;Qin, G. G. |
| 2008 |
Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence |
Zhao, W. Q.;Ran, G. Z.;Liu, Z. W.;Bian, Z. Q.;Sun, K.;Xu, W. J.;Huang, C. H.;Qin, G. G. |
| 2006 |
Efficient 1.54 mu m light emitting diode with nanometer thick polycrystalline Si anode and organic sandwich structure |
Zhao, W. Q.;Ran, G. Z.;Ma, G. L.;Xu, W. J.;Dai, L.;Liu, W. M.;Wang, P. F.;Qin, G. G. |
| 2013 |
Electron-irradiated n(+)-Si as hole injection tunable anode of organic light-emitting diode |
Li, Y. Z.;Wang, Z. L.;Wang, Y. Z.;Luo, H.;Xu, W. J.;Ran, G. Z.;Qin, G. G. |
| 2009 |
Fine structure and high intensity of photoluminescence from Er doped in Ni-Si-O compounds |
Sun, K.;Xu, W. J.;Ye, Y.;Ran, G. Z.;Qin, G. G. |
| 2007 |
Growth, optical, and electrical properties of single-crystalline Si-CdSe biaxial p-n heterostructure nanowires |
Zhang, Y. F.;Yout, L. P.;Shan, X. A.;Wei, X. L.;Huo, H. B.;Xu, W. J.;Dai, L. |
| 2008 |
High-performance nanowire complementary metal-semiconductor inverters |
Ma, R. M.;Dai, L.;Liu, C.;Xu, W. J.;Qin, G. G. |
| 2010 |
Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide polycrystalline p-Si composite anode |
Li, Y. Z.;Wang, Z. L.;Luo, H.;Wang, Y. Z.;Xu, W. J.;Ran, G. Z.;Qin, G. G.;Zhao, W. Q.;Liu, H. |
| 2011 |
Hybrid organic light emitting device with silicon-rich oxide as hole transporting layer |
Ran, G. Z.;Jiang, D. F.;Yin, Y.;Xu, W. J. |
| 2008 |
Inverted top-emission organic light-emitting device with n-type silicon as cathode |
Zhao, W. Q.;Ran, G. Z.;Xu, W. J.;Qin, G. G. |
| 2010 |
Multilayered graphene used as anode of organic light emitting devices |
Sun, T.;Wang, Z. L.;Shi, Z. J.;Ran, G. Z.;Xu, W. J.;Wang, Z. Y.;Li, Y. Z.;Dai, L.;Qin, G. G. |
| 2008 |
Passivated p-type silicon: Hole injection tunable anode material for organic light emission |
Zhao, W. Q.;Ran, G. Z.;Xu, W. J.;Qin, G. G. |
| 2010 |
Room temperature Er3+ 1.54 mu m electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering |
Yin, Y.;Xu, W. J.;Wei, F.;Ran, G. Z.;Qin, G. G.;Shi, Y. F.;Yao, Q. G.;Yao, S. D. |
| 2008 |
Strong enhancement of Er(3+) 1.54 mu m electroluminescence through amorphous Si nanoparticles |
Sun, K.;Xu, W. J.;Zhang, B.;You, L. P.;Ran, G. Z.;Qin, G. G. |
| 2008 |
Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs |
Liu, C.;Dai, L.;You, L. P.;Xu, W. J.;Ma, R. M.;Yang, W. Q.;Zhang, Y. F.;Qin, G. G. |
| 2009 |
Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror |
Li, Y. Z.;Xu, W. J.;Ran, G. Z.;Qin, G. G. |
| 2010 |
Ultralow-Power Complementary Metal-Oxide-Semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors |
Ma, R. M.;Peng, R. M.;Wen, X. N.;Dai, L.;Liu, C.;Sun, T.;Xu, W. J.;Qin, G. G. |
