| Title | Electron-irradiated n(+)-Si as hole injection tunable anode of organic light-emitting diode |
| Authors | Li, Y. Z. Wang, Z. L. Wang, Y. Z. Luo, H. Xu, W. J. Ran, G. Z. Qin, G. G. |
| Affiliation | Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China. Chinese Acad Sci, Key Lab Semicond Mat, Beijing 100083, Peoples R China. |
| Keywords | SILICON ANODE HIGH-EFFICIENCY SI DEVICES |
| Issue Date | 2013 |
| Publisher | 应用物理学b辑 激光与光学 |
| Citation | APPLIED PHYSICS B-LASERS AND OPTICS.2013,110,(1),95-99. |
| Abstract | Traditionally, n-type silicon is not regarded as a good anode of organic light emitting diode (OLED) due to the extremely low hole concentration in it; however, when doped with Au element which acts as carrier generation centers, it can be, as shown in our previous work. In this study, we demonstrate a new kind of carrier generation centers in n(+)-type silicon, which are the defects produced by 5 MeV electron irradiation. The density of carrier generation centers in the irradiated n(+)-Si anode can be controlled by tuning the electron irradiation time, and thus hole injection current in the OLEDs with the irradiated n(+)-Si anode can be optimized, leading to their much higher maximum efficiencies than those of the OLEDs with non-irradiated n(+)-Si anode. For a green phosphorescent OLED with the irradiated n(+)-Si anode, the current efficiency and power efficiency reach up to 12.1 cd/A and 4.2 lm/W, respectively. |
| URI | http://hdl.handle.net/20.500.11897/148331 |
| ISSN | 0946-2171 |
| DOI | 10.1007/s00340-012-5255-7 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
