Browsing by Author Huang, R.

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Issue Date Title Author(s)
2009 0.5 V ultra-low power wideband LNA with forward body bias technique Liu, J.;Liao, H.;Huang, R.
2018 Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity Cheng, C.;Li, Y.;Zhang, T.;Fang, Y.;Zhu, J.;Liu, K.;Xu, L.;Cai, Y.;Yan, X.;Yang, Y.;Huang, R.
2005 A comparative study of program/erase characteristic of low-voltage low-power NROM using high-K materials as tunnel dielectric Cai, Y. M.;Huang, R.;Shan, X. N.;Long, Z. F.;Li, Y.;Wang, Y. Y.
2006 A comparative study of program/erase characteristic of low-voltage low-power NROM using high-K materials as tunnel dielectric Cai, Y.M.;Huang, R.;Shan, X.N.;Long, Z.F.;Li, Y.;Wang, Y.Y.
2019 Comprehensive Study on the 'Anomalous' Complex RTN in Advanced Multi-Fin Bulk FinFET Technology Zhang, J.;Zhang, Z.;Wang, R.;Sun, Z.;Zhang, Z.;Guo, S.;Huang, R.
2013 Constant shape factor frequency modulated charge pumping (FMCP) Ryan, J.T.;Campbell, J.P.;Zou, J.;Cheung, K.P.;Southwick, R.G.;Oates, A.S.;Huang, R.
2001 Dependence of R-G current on bulk traps characteristics and silicon film structure in SOI gated-diode He, J.;Huang, R.;Zhang, X.;Sun, F.;Wang, Y.Y.
2019 Dual-Gated MoS2 Neuristor for Neuromorphic Computing Bao, L.;Cai, Y.;Huang, R.;Zhu, J.;Yu, Z.;Jia, R.;Cai, Q.;Wang, Z.;Xu, L.;Wu, Y.;Yang, Y.
2004 Effect of post-annealing on the physical and electrical properties of LaAlO3 gate dielectrics Lu, X.B.;Zhang, X.;Huang, R.;Lu, H.B.;Chen, Z.H.;Zhou, H.W.;Wang, X.P.;Nguyen, B.Y.;Wang, C.Z.
2019 Enhancement of HfO 2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer Chen, Y.-S.;Chen, Y.-S.;Huang, R.;Wang, Z.;Zhang, Z.;Wang, L.;Fang, Y.;Lou, J.-C.;Liu, K.;Xu, J.;Cai, Y.
2001 Equivalent doping transformation method for predicting breakdown voltage and peak field at breakdown of epitaxial-diffused punch-through junction He, J.;Zhang, X.;Huang, R.;Wang, Y.Y.
2019 Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering Long, Y.;Long, Y.;Huang, J.Z.;Huang, Q.;Xu, N.;Jiang, X.;Jiang, X.;Niu, Z.-C.;Niu, Z.-C.;Esseni, D.;Huang, R.;Li, S.-S.;Li, S.-S.
2001 GeSi source/drain structure for suppression of short channel effect in SOI p-MOSFET's Huang, R.;Bu, W.H.;Wang, Y.Y.
2018 High performance GAA SNWT with a triangular cross section: Simulation and experiments Li, M.;Chen, G.;Huang, R.
2002 Improved SOI image sensor design based on backside illumination on Silicon-on-Sapphire (SOS) substrate Shen, Chao;Xu, Chen;Huang, R.;Ko, Ping K.;Chan, Mansun
2019 Investigation of NbO x-based volatile switching device with self-rectifying characteristics Fang, Y.;Wang, Z.;Cheng, C.;Yu, Z.;Zhang, T.;Yang, Y.;Cai, Y.;Huang, R.
2014 Investigation of passivation of Ge substrate by N2O plasma and N2 plasma treatment Lin, M.;Li, M.;An, X.;Yun, Q.;Li, M.;Li, Z.;Liu, P.;Zhang, B.;Zhang, X.;Huang, R.
2017 Investigation on the Vdd scaling limit of stochastic computing circuits based on FinFET technology Jiang, X.;Wang, R.;Guo, S.;Huang, R.
2019 Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields Li, X.;Li, M.;Huang, R.;Zhang, B.;Wang, B.;Xu, X.;Yang, Y.;Sun, S.;Cai, Q.;Hu, S.;An, X.
2019 Margin Dependence on Array Size for Asymmetric Resistive Memory Cell Yu, Z.;Fang, Y.;Wang, Z.;Cai, Y.;Huang, R.;Xu, J.
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