| Title | Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields |
| Authors | Li, X. Li, M. Huang, R. Zhang, B. Wang, B. Xu, X. Yang, Y. Sun, S. Cai, Q. Hu, S. An, X. |
| Affiliation | Key Laboratory of Microelectronic Devices and Circuits (MOE),Institute of Microelectronics,Peking University,Beijing,100871,Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China,China |
| Issue Date | 2019 |
| URI | http://hdl.handle.net/20.500.11897/555377 |
| ISSN | 1869-1919 |
| DOI | 10.1007/s11432-019-9910-x |
| Appears in Collections: | 信息科学技术学院 |
