| Title | Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field |
| Authors | Li, Hong Liu, Yuhang Bai, Zhonghao Xiong, Jie Liu, Fengbin Zhou, Gang Qing, Tao Zhang, Shaohua Lu, Jing |
| Affiliation | North China Univ Technol, Coll Mech & Mat Engn, Beijing 100144, Peoples R China Beijing Inst Control Engn, Beijing Key Lab Long Life Technol Precise Rotat &, Beijing 100094, Peoples R China Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China Peking Univ, Dept Phys, Beijing 100871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226000, Peoples R China |
| Keywords | SOLAR-CELLS STRAIN MOS2 POLARIZATION TRANSISTORS TRANSPORT EPITAXY BARRIER WSE2 |
| Issue Date | 6-May-2022 |
| Publisher | PHYSICS LETTERS A |
| Abstract | To obtain Ohmic contact on the metal/semiconductor interface is desirable for optimizing the nano electronics' performance. We systematically investigate how the applied electric field affects the interface contacts on the graphene and low-buckling hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) vdW heterostructures using the first-principles methods. The energy favorable vdW heterostructures have the metal group-III (Ga, In) atom closer to graphene and narrow p-type Schottky barriers of 0.05 similar to 0.40 eV. The p-type Schottky contacts of the Gr/GaAs, Gr/InP, and Gr/InAs vdW heterostructures would transform to n-type under negative electric fields of -0.35 similar to-0.54 V/angstrom. Inspiringly, successful realization of p-type Ohmic contacts has occurred under positive electric fields of 0.1 similar to 0.4 V/angstrom for all the Gr/III-V vdW heterostructures. (C) 2022 Elsevier B.V. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/641937 |
| ISSN | 0375-9601 |
| DOI | 10.1016/j.physleta.2022.128029 |
| Indexed | EI SCI(E) |
| Appears in Collections: | 其他实验室 人工微结构和介观物理国家重点实验室 |
