| Issue Date | Title | Author(s) |
| Sep-2021 | Device performance limit of monolayer SnSe2 MOSFET | Li, Hong; Liang, Jiakun; Wang, Qida; Liu, Fengbin; Zhou, Gang; Qing, Tao; Zhang, Shaohua; Lu, Jing |
| Mar-2022 | Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application | Wang, Qida; Xu, Peipei; Li, Hong; Liu, Fengbin; Sun, Shuai; Zhou, Gang; Qing, Tao; Zhang, Shaohua; Lu, Jing |
| 9-Apr-2024 | Effective self-power photodetector based on photogalvanic effect: A case study for Janus MoSSe-CrSSe lateral heterojunction | Wang, Qiaohui; Li, Hong; An, Kang; Liu, Fengbin; Lu, Jing |
| 1-Jun-2022 | Engineering Schottky barrier in vertical graphene/InN heterostructure | Liu, Yuhang; Li, Hong; Liu, Fengbin; Sun, Shuai; Zhou, Gang; Qing, Tao; Zhang, Shaohua; Lu, Jing |
| Jun-2024 | First-principles study on graphene/WSi<sub>2</sub> N<sub>4</sub> van der Waals heterostructure: Tuning the Schottky barrier | Li, Jiahui; Li, Hong; Bai, Zhonghao; Liu, Fengbin; An, Kang; Lu, Jing |
| Apr-2024 | Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field | Yuan, Xinqi; Li, Hong; Lu, Junyan; An, Kang; Liu, Fengbin; Lu, Jing |
| May-2024 | Ideal electrodes for monolayer boron phosphide and their device performance | Li, Hong; Li, Jiahui; Liu, Yuhang; An, Kang; Liu, Fengbin; Lu, Jing |
| Apr-2021 | Layer-Controlled Low-Power Tunneling Transistors Based on SnS Homojunction | Liang, Jiakun; Li, Hong; Liu, Fengbin; Lu, Jing |
| 15-Nov-2022 | Lifting on-state currents for GeS-based tunneling field-effect transistors with electrode optimization | Li, Hong; Wang, Qida; Liu, Fengbin; Lu, Jing |
| 6-May-2022 | Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field | Li, Hong; Liu, Yuhang; Bai, Zhonghao; Xiong, Jie; Liu, Fengbin; Zhou, Gang; Qing, Tao; Zhang, Shaohua; Lu, Jing |
| Apr-2020 | Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation | Li, Hong; Xu, Peipei; Liang, Jiakun; Liu, Fengbin; Luo, Jing; Lu, Jing |
| 23-May-2024 | Ohmic MXene Contacts for Symmetric <i>p</i>- and <i>n</i>-type Monolayer WSe<sub>2</sub> Schottky Barrier Field-Effect Transistors | Li, Hong; Yuan, Xinqi; Li, Jingzhen; An, Kang; Liu, Fengbin; Sun, Shuai; Lu, Jing |
| 5-Apr-2024 | On-State Current Optimization for SnSe<sub>2</sub> Tunneling Field Effect Transistors with Silicene Electrodes | Li, Hong; Zhang, Yunfeng; Liu, Fengbin; An, Kang; Sun, Shuai; Lu, Jing |
| Dec-2022 | Point-defect improved photogalvanic effect in Janus WSSe monolayer | Li, Hong; Zhang, YunFeng; Du, Wei; Da, Jiang; Ji, Shiyu; Sun, Shuai; Liu, Fengbin; Lu, Jing |
| 15-Oct-2023 | Scaling limits of monolayer AlN and GaN MOSFETs | Li, Hong; Liu, Yuhang; Sun, Shuai; Liu, Fengbin; Lu, Jing |
| 1-Mar-2024 | A self-power photodetector based on Janus SnSSe-ZrSSe lateral heterojunction: A theoretical study | Li, Hong; Yuan, Xinqi; Liu, Fengbin; An, Kang; Lu, Jing |
| 1-Sep-2023 | Sub-5-nm Monolayer Boron Pnictide MOSFETs for n- and p-Type High-Performance Applications | Li, Hong; Liu, Yuhang; Liu, Fengbin; Lu, Jing |
