| Title | Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor With Built-In p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region |
| Authors | Yang, Junjie Zhang, Meng Wu, Yanlin Wang, Maojun Wei, Jin |
| Affiliation | Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China |
| Keywords | HIGH-VOLTAGE SOI-LIGBT BULK SI IGBT |
| Issue Date | Feb-2022 |
| Publisher | IEEE ELECTRON DEVICE LETTERS |
| Abstract | A double-gate RESURF lateral IGBT (DGR-LIGBT) with build-in p-channel MOSFET (p-MOSFET) is proposed and studied by numerical TCAD simulations. In the conventional LIGBTs, V-ON is reduced by conductivity modulation in drift region. However, the stored minority carriers lead to high turn-off lose (E-OFF). In the proposed DGR-LIGBT, the RESURF region is connected to the p-body via the built-in p-MOSFET. The primary gate switches the DGR-LIGBT between on- and off-states. In the on-state, a positive auxiliary gate voltage is applied to turn off the p-MOSFET; the RESURF region is disconnected from the p-body. Thus, the DGR-LIGBT works in fully modulated state and maintains a low V-ON. Before the turn-off transient, the auxiliary gate voltage is pre-switched to a negative voltage to turn on the p-MOSFET, which electrically connects the RESURF region to the grounded p-body and extracts holes in the entire drift region. Therefore, the conductivity modulation throughout the drift region is suppressed, resulting in low E-OFF. |
| URI | http://hdl.handle.net/20.500.11897/637392 |
| ISSN | 0741-3106 |
| DOI | 10.1109/LED.2022.3140221 |
| Indexed | EI SCI(E) |
| Appears in Collections: | 待认领 |
