Showing results 1 to 20 of 99
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| Issue Date | Title | Author(s) |
| 2014 | 300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio | Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| Oct-2023 | 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability | Yu, Jingjing; Wei, Jin; Wang, Maojun; Yang, Junjie; Wu, Yanlin; Cui, Jiawei; Li, Teng; Wang, Jinyan; Shen, Bo |
| 2014 | 900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate | Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin J.; Shen, Bo |
| 2014 | Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer | Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J. |
| 2014 | Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress | Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing |
| Feb-2024 | Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit | Fan, Zetao; Wang, Maojun; Wei, Jin; Nuo, Muqin; Zhou, Jin; Zhang, Jiaxin; Hao, Yilong; Shen, Bo |
| 2013 | Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation | Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May |
| Sep-2022 | Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs | Sun, Haozhe; Lei, Wen; Chen, Jianguo; Jin, Yufeng; Wang, Maojun |
| 2016 | Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon | Tao, Ming; Wang, Maojun; Liu, Shaofei; Xie, Bing; Yu, Min; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo |
| 2013 | Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate | Di, Meng; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang |
| Nov-2023 | Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment | Huang, Chengyu; Wang, Jinyan; Wang, Maojun; He, Jin; Li, Mengjun; Zhang, Bin; He, Yandong |
| 2019 | A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance | Yin, Ruiyuan; Li, Yue; Lin, Wei; Wen, Cheng P.; Hao, Yilong; Fu, Yunyi; Wang, Maojun |
| 2018 | Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET | Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun |
| Feb-2023 | Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings | Xu, Jiayue; Liu, Xuan; Xie, Bing; Hao, Yilong; Wen, Cheng P.; Wei, Jin; Wang, Maojun |
| 2014 | Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask | Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
| 20-Feb-2024 | Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer | Li, Teng; Zhang, Meng; Yu, Jingjing; Cui, Jiawei; Yang, Junjie; Wu, Yanlin; Yang, Han; Zhang, Yamin; Yang, Xuelin; Wang, Maojun; Feng, Shiwei; Shen, Bo; Wei, Jin |
| Sep-2022 | The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique | Chen, Jiarui; Su, Yuanzhang; Pan, Chaowu; Kuang, Weizhe; Yang, Kai; Wang, Haochen; Wang, Maojun; Zhang, Bo; Zhou, Qi |
| Feb-2022 | Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor With Built-In p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region | Yang, Junjie; Zhang, Meng; Wu, Yanlin; Wang, Maojun; Wei, Jin |
