| Title | Device performance limit of monolayer SnSe2 MOSFET |
| Authors | Li, Hong Liang, Jiakun Wang, Qida Liu, Fengbin Zhou, Gang Qing, Tao Zhang, Shaohua Lu, Jing |
| Affiliation | North China Univ Technol, Coll Mech & Mat Engn, Beijing 100144, Peoples R China Beijing Inst Control Engn, Beijing Key Lab Long Life Technol Precise Rotat &, Beijing 100094, Peoples R China Peking Univ, State Key Lab Mesoscop Phys & Dept Phys, Beijing 100871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226000, Peoples R China |
| Keywords | FIELD-EFFECT TRANSISTORS CARRIER MOBILITY TRANSPORT ELECTRON GRAPHENE |
| Issue Date | Sep-2021 |
| Publisher | NANO RESEARCH |
| Abstract | Two-dimensional (2D) semiconductors are attractive channels to shrink the scale of field-effect transistors (FETs), and among which the anisotropic one is more advantageous for a higher on-state current (I-on). Monolayer (ML) SnSe2, as an abundant, economic, nontoxic, and stable two-dimensional material, possesses an anisotropic electronic nature. Herein, we study the device performances of the ML SnSe2 metal-oxide-semiconductor FETs (MOSFETs) and deduce their performance limit to an ultrashort gate length (L-g) and ultralow supply voltage (V-dd) by using the ab initio quantum transport simulation. An ultrahigh I-on of 5,660 and 3,145 mu A/mu m is acquired for the n-type 10-nm-L-g ML SnSe2 MOSFET at V-dd = 0.7 V for high-performance (HP) and low-power (LP) applications, respectively. Specifically, until L-g scales down to 2 and 3 nm, the MOSFETs (at V-dd = 0.65 V) surpass I-on, intrinsic delay time (tau), and power-delay product (PDP) of the International Roadmap for Device and Systems (IRDS, 2020 version) for HP and LP devices for the year 2028. Moreover, the 5-nm-L-g ML SnSe2 MOSFET (at V-dd = 0.4 V) fulfills the IRDS HP device and the 7-nm-L-g MOSFET (at V-dd = 0.55 V) fulfills the IRDS LP device for the year 2034. |
| URI | http://hdl.handle.net/20.500.11897/624266 |
| ISSN | 1998-0124 |
| DOI | 10.1007/s12274-021-3785-1 |
| Indexed | EI SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
