| Title | Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes |
| Authors | Liu, Fang Zhang, Zhihong Rong, Xin Yu, Ye Wang, Tao Sheng, Bowen Wei, Jiaqi Zhou, Siyuan Yang, Xuelin Xu, Fujun Qin, Zhixin Zhang, Yuantao Liu, Kaihui Shen, Bo Wang, Xinqiang |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 00871, Peoples R China Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Keywords | GROWTH LAYER |
| Issue Date | Mar-2020 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Abstract | Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga-polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen-polarity GaN films on transferred graphene on non-polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where C-N bonds are formed in graphene and provide nucleation sites for GaN and leading to N-polarity GaN epitaxy. The N-polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N-polarity than that at Ga-polarity, green light emitting diodes are fabricated on the graphene-assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III-nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices. |
| URI | http://hdl.handle.net/20.500.11897/606567 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.202001283 |
| Indexed | SCI(E) Scopus EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
