| Title | Temperature Dependence of Diode and ggNMOS ESD Protection Structures in 28nm CMOS |
| Authors | Li, Cheng Zhang, Feilong Wang, Chenkun ChenQi Lu, Fei Wang, Han Di, Mengfu Cheng, Yuhua Zhao, Haijun Wang, Albert |
| Affiliation | Univ Calif Riverside, Dept ECE, Riverside, CA 92521 USA. Peking Univ, Shanghai Res Inst Microelect, Beijing, Peoples R China. SMIC, Shanghai, Peoples R China. |
| Issue Date | 2018 |
| Publisher | 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) |
| Citation | 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). 2018, 743-745. |
| Abstract | This paper reports an experimental study of the temperature dependence of diode, diode-string and grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection structures fabricated in a foundry 28nm CMOS technology. The fabricated diode and ggNMOS ESD structures were characterized using transmission line pulse (TLP) testing over a temperature range from -40 degrees C to +110 degrees C. The observed temperature variation provides a guideline for practical ESD protection circuit designs. |
| URI | http://hdl.handle.net/20.500.11897/573607 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 上海微电子研究院 |
