| Issue Date | Title | Author(s) |
| 2017 | Characterization and Analysis of Diode-String ESD Protection in 28nm CMOS by VFTLP | Li, Cheng; Wang, Chenkun; Chen, Qi; Zhang, Feilong; Lu, Fei; Shi, Xuejie; Yang, Yongsheng; Li, Hongwei; Chen, Guang; Li, Tony; Feng, Danniel; Tang, Tianshen; Cheng, Yuhua; Wang, Albert |
| 2018 | Characterization of single-crystalline graphene ESD interconnects | Chen, Qi; Li, Cheng; Lu, Fei; Wang, Chenkun; Zhang, Feilong; Wu, Tianru; Xie, Xiaoming; Zhang, Kun; Li, Xinxin; Ng, Jimmy; Xie, Ya-Hong; Cheng, Yuhua; Wang, Albert |
| 2017 | Characterization of Single-Crystalline Graphene ESD Interconnects | Chen, Qi; Li, Cheng; Lu, Fei; Wang, Chenkun; Zhang, Feilong; Wu, Tianru; Xie, Xiaoming; Zhang, Kun; Li, Xinxin; Ng, Jimmy; Xie, Ya-Hong; Cheng, Yuhua; Wang, Albert |
| 2017 | Circuit-Level ESD Protection Simulation Using Behavior Models in 28nm CMOS | Zhang, Feilong; Wang, Chenkun; Lu, Fei; Chen, Qi; Li, Cheng; Wang, Albert; Li, Daguang; Yu, Shaofeng; Zhu, Chengyu; Tang, Tianshen; Cheng, Yuhua |
| 2017 | A Comparison Study of DTSCR by TCAD and VFTLP for CDM ESD Protection | Wang, Chenkun; Zhang, Feilong; Lu, Fei; Chen, Qi; Li, Cheng; Zhao, Meng; Gu, Huihui; Feng, Guangtao; Wu, Hongying; Tang, Tianshen; Cheng, Yuhua; Wang, Albert |
| 2016 | A Systematic Study of ESD Protection Co-Design With High-Speed and High-Frequency ICs in 28 nm CMOS | Lu, Fei; Ma, Rui; Dong, Zongyu; Wang, Li; Zhang, Chen; Wang, Chenkun; Chen, Qi; Wang, X. Shawn; Zhang, Feilong; Li, Cheng; Tang, He; Cheng, Yuhua; Wang, Albert |
| 2016 | Systematic Transient Characterization of Graphene Interconnects for on-Chip ESD Protection | Chen, Qi; Ma, Rui; Lu, Fei; Wang, Chenkun; Liu, Ming; Wang, Albert; Zhang, Wei; Xia, Ming; Xie, Ya-Hong; Cheng, Yuhua |
| 2018 | Temperature Dependence of Diode and ggNMOS ESD Protection Structures in 28nm CMOS | Li, Cheng; Zhang, Feilong; Wang, Chenkun; ChenQi; Lu, Fei; Wang, Han; Di, Mengfu; Cheng, Yuhua; Zhao, Haijun; Wang, Albert |
