Title Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN
Authors Wang, Ping
Wang, Tao
Wang, Hui
Sun, Xiaoxiao
Huang, Pu
Sheng, Bowen
Rong, Xin
Zheng, Xiantong
Chen, Zhaoying
Wang, Yixin
Wang, Ding
Liu, Huapeng
Liu, Fang
Yang, Liuyun
Li, Duo
Chen, Ling
Yang, Xuelin
Xu, Fujun
Qin, Zhixin
Shi, Junjie
Yu, Tongjun
Ge, Weikun
Shen, Bo
Wang, Xinqiang
Affiliation Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
Peking Univ, NFC MOE, Beijing 100871, Peoples R China
Keywords atomically thin AlN
bandgap
EELS
nanotubes
XPS
Issue Date 2019
Publisher ADVANCED FUNCTIONAL MATERIALS
Abstract Ultrathin III-nitrides beyond BN, such as GaN and AlN, have attracted much research interest due to their potential applications in 2D optoelectronic devices. Taking advantage of the atomic thickness, the bandgap is expected to be widened in these thin films due to quantum confinement. As a promising intrinsic dielectric and tunneling layer for optoelectronic devices, ultrathin freestanding AlN structures have not been systematically studied, and the band structure still remains in the theoretical description. In this work, atomically thin hexagonal AlN nanotubes with controllable wall thickness have been fabricated via selective thermal evaporating the GaN/AlN core/shell nanowires, where the GaN cores entirely decomposed and are removed from the bottom open end while the robust AlN shells remain and form tubular structures. The bandgap energy of 9.2 +/- 0.1 eV is confirmed through spectrally resolved X-ray photoelectron spectroscopy and spatially resolved electron energy loss spectroscopy measurements on AlN nanotubes with the wall thickness of two monolayers.
URI http://hdl.handle.net/20.500.11897/545474
ISSN 1616-301X
DOI 10.1002/adfm.201902608
Indexed SCI(E)
EI
Appears in Collections: 物理学院
人工微结构和介观物理国家重点实验室

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