| Title | Characterization of single-crystalline graphene ESD interconnects |
| Authors | Chen, Qi Li, Cheng Lu, Fei Wang, Chenkun Zhang, Feilong Wu, Tianru Xie, Xiaoming Zhang, Kun Li, Xinxin Ng, Jimmy Xie, Ya-Hong Cheng, Yuhua Wang, Albert |
| Affiliation | Department of ECE, University of California-Riverside, Riverside, CA, 92507, United States Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China Department of MSE, University of California, Los Angeles, Los Angeles, CA, 90095, United States Shanghai Research Institute of Microelectronics, Peking University, Shanghai, China |
| Issue Date | 2018 |
| Publisher | 12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 |
| Citation | 12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017. 2018, 2017-October, 977-980. |
| Abstract | We report systematic transient characterization of single-crystalline graphene (SCG) interconnects for electrostatic discharge (ESD) protection for integrated circuits (IC). Single-crystalline graphene ribbons were fabricated by CVD method with practical dimensions and characterized by transmission line pulsing (TLP) and very-fast TLP (VFTLP) measurements. Comprehensive TLP and VFTLP testing with varying pulse rise time (tr) and duration (td) was performed. Measurement statistics show improvement of ESD protection capability compared with poly-crystalline graphene (PCG) ESD interconnects. Specifically, ESD current handling density (Jt2) of SCG wires is up to �?09A/cm2, about three times higher than that for PCG ESD interconnects. © 2017 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/530717 |
| ISSN | 9781509066247 |
| DOI | 10.1109/ASICON.2017.8252641 |
| Indexed | EI |
| Appears in Collections: | 上海微电子研究院 信息科学技术学院 |
