| Title | Characterization of Single-Crystalline Graphene ESD Interconnects |
| Authors | Chen, Qi Li, Cheng Lu, Fei Wang, Chenkun Zhang, Feilong Wu, Tianru Xie, Xiaoming Zhang, Kun Li, Xinxin Ng, Jimmy Xie, Ya-Hong Cheng, Yuhua Wang, Albert |
| Affiliation | Univ Calif Riverside, Dept ECE, Riverside, CA 92507 USA. Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Beijing, Peoples R China. Univ Calif Los Angeles, Dept MSE, Los Angeles, CA 90095 USA. Peking Univ, Shanghai Res Inst Microelect, Shanghai, Peoples R China. |
| Keywords | PROTECTION |
| Issue Date | 2017 |
| Publisher | 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) |
| Citation | 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON). 2017, 977-980. |
| Abstract | We report systematic transient characterization of single-crystalline graphene (SCG) interconnects for electrostatic discharge (ESD) protection for integrated circuits (IC). Single-crystalline graphene ribbons were fabricated by CVD method with practical dimensions and characterized by transmission line pulsing (TLP) and very-fast TLP (VFTLP) measurements. Comprehensive TLP and VFTLP testing with varying pulse rise time (t(r)) and duration (t(d)) was performed. Measurement statistics show improvement of ESD protection capability compared with poly-crystalline graphene (PCG) ESD interconnects. Specifically, ESD current handling density (J(t2)) of SCG wires is up to similar to 10(9) A/cm(2), about three times higher than that for PCG ESD interconnects. |
| URI | http://hdl.handle.net/20.500.11897/511942 |
| ISSN | 2162-7541 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 上海微电子研究院 |
