| Title | Characterization and Analysis of Diode-String ESD Protection in 28nm CMOS by VFTLP |
| Authors | Li, Cheng Wang, Chenkun Chen, Qi Zhang, Feilong Lu, Fei Shi, Xuejie Yang, Yongsheng Li, Hongwei Chen, Guang Li, Tony Feng, Danniel Tang, Tianshen Cheng, Yuhua Wang, Albert |
| Affiliation | Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA. Semicond Mfg Int Shanghai Corp, Shanghai, Peoples R China. Peking Univ, Shanghai Res Inst Microelect, Shanghai, Peoples R China. Peking Univ, Sch Elect Engn & Comp Sci, Beijing, Peoples R China. |
| Keywords | DESIGN |
| Issue Date | 2017 |
| Publisher | 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) |
| Citation | 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). 2017. |
| Abstract | This paper reports characterization and analysis of diode string electrostatic discharging (ESD) protection structures fabricated in a foundry 28nm CMOS technology. Comprehensive measurements were conducted using very-fast transmission line pulse (VFTLP) tester for Charged Device Model (CDM) ESD protection. The analysis results reveal the I-V insights critical to practical ESD protection designs. |
| URI | http://hdl.handle.net/20.500.11897/511895 |
| ISSN | 1946-1550 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 上海微电子研究院 信息科学技术学院 |
