Title | Transition from bound to free excitons observed in deep- ultraviolet photoluminescence of AlN grown by MOCVD |
Authors | Wang, Weiying Jin, Peng Tang, Ning Liu, Yali Fu, Lei Xu, Fujun Qin, Zhixin Ge, Weikun Shen, Bo |
Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China. |
Keywords | AlN photoluminescence deep ultraviolet exciton phonon TEMPERATURE-DEPENDENCE GAN SEMICONDUCTORS SCATTERING CRYSTALS FILMS |
Issue Date | 2016 |
Publisher | MATERIALS RESEARCH EXPRESS |
Citation | MATERIALS RESEARCH EXPRESS.2016,3(7). |
Abstract | The transition from bound exciton to free exciton and exciton-phonon interaction in an AlN epilayer have been investigated by time resolved deep ultraviolet photoluminescence spectroscopy. Based on the analysis of the energy position (S-shaped dependence with temperature), integrated intensity as well as decay time, the main X peak located at 6.06 eV at 7.7 K is assigned to originate from radiative recombination of excitons bound to some unintentionally doped Si or O impurities. While the other two peaks on the lower energy side should be from the bound exciton's phonon replicas. The corresponding small Huang-Rhys factor indicates weak interaction between phonon and bound excitons, in comparison to the case of free exciton, for which our experimental results are in good agreement with the theoretical calculation of the Huang-Rhys factors. |
URI | http://hdl.handle.net/20.500.11897/491998 |
ISSN | 2053-1591 |
DOI | 10.1088/2053-1591/3/7/076201 |
Indexed | SCI(E) |
Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |