| Title | Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods |
| Authors | Wang, Ping Wang, Xinqiang Wang, Tao Tan, Chih-Shan Sheng, Bowen Sun, Xiaoxiao Li, Mo Rong, Xin Zheng, Xiantong Chen, Zhaoying Yang, Xuelin Xu, Fujun Qin, Zhixin Zhang, Jian Zhang, Xixiang Shen, Bo |
| Affiliation | Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. Natl Tsing Hua Univ, Dept Chem, Hsinchu 30013, Taiwan. China Acad Engn Phys CAEP, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China. Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China. Wang, XQ Shen, B (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Zhang, XX (reprint author), King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. |
| Keywords | gallium nitride hierarchical nanotripods lattice symmetry microstructures molecular beam epitaxy nanowires MOLECULAR-BEAM EPITAXY CATALYZED GAAS NANOWIRES SINGLE-PHOTON EMISSION QUANTUM-DOT ZNO NANOTETRAPODS WURTZITE GROWTH TEMPERATURE ZINCBLENDE INN |
| Issue Date | 2017 |
| Publisher | ADVANCED FUNCTIONAL MATERIALS |
| Citation | ADVANCED FUNCTIONAL MATERIALS.2017,27(9). |
| Abstract | Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices. |
| URI | http://hdl.handle.net/20.500.11897/474682 |
| ISSN | 1616-301X |
| DOI | 10.1002/adfm.201604854 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
