| Title | Post-si programmable ESD protection circuit design: Mechanisms and analysis |
| Authors | Wang, Xin Shi, Zitao Liu, Jian Lin, Lin Zhao, Hui Wang, Li Ma, Rui Zhang, Chen Dong, Zongyu Fan, Siqiang Tang, He Wang, Albert Cheng, Yuhua Zhao, Bin Zhang, Zhigang Chi, Baoyong Ren, Tian-Ling |
| Affiliation | Department of Electrical Engineering, University of California, Riverside, CA 92524, United States Marvell Technology Group Ltd., Santa Clara, CA 95054, United States RF Micro Device, Greensboro, NC 27409, United States IBM Systems and Technology Group, Essex Junction, VT 05452, United States Fairchild Semiconductor, Inc., Irvine, CA, United States University of Electronic Science and Technology of China, Chengdu 610054, China SHRIME, Peking University, Shanghai 201203, China Tsinghua University, 100084 Beijing, China |
| Issue Date | 2013 |
| Publisher | IEEE Journal of Solid-State Circuits |
| Citation | IEEE Journal of Solid-State Circuits.2013,48(5),1237-1249. |
| Abstract | This paper reports new mechanisms, design, and analysis of novel electrostatic discharge (ESD) protection solutions, which enable post-Si field-programmable ESD protection circuit design for the first time. Two new ESD protection concepts, nano-crystal quantum-dot (NC-QD) and silicon-oxide- nitride-oxide-silicon (SONOS)-based ESD protection, are presented. Experiments validated the two new programmable ESD protection mechanisms. Prototype designs demonstrated a wide adjustable ESD triggering voltage (Vt1) range of ??Vt1 ?? 2 V, very fast response (t1) to ESD transients of rising time tr ?? 100 pS and pulse duration t d ?? 1 nS, ESD protection capability (It2) of at least 25 mA/??m for human body model (HBM) and 400 mA/??m for charged device model (CDM) equivalent stressing, and very low leakage current (Ileak) as low as 1.2 pA. Field-programmable ESD protection circuit design examples are discussed. ? 2013 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/461286 |
| ISSN | 00189200 |
| DOI | 10.1109/JSSC.2013.2255192 |
| Indexed | EI |
| Appears in Collections: | 上海微电子研究院 |
