| Title | Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires |
| Authors | Wang, Ping Yuan, Ying Zhao, Chao Wang, Xinqiang Zheng, Xiantong Rong, Xin Wang, Tao Sheng, Bowen Wang, Qingxiao Zhang, Yongqiang Bian, Lifeng Yang, Xuelin Xu, Fujun Qin, Zhixin Li, Xinzheng Zhang, Xixiang Shen, Bo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. King Abdullah Univ Sci & Technol, Core Labs, Thuwal 239556900, Saudi Arabia. Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China. Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Wang, XQ Shen, B (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Zhang, XX (reprint author), King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia. Zhang, XX (reprint author), King Abdullah Univ Sci & Technol, Core Labs, Thuwal 239556900, Saudi Arabia. |
| Keywords | nanowires indium nitride lattice-polarity molecular beam epitaxy hexagonal semiconductor INITIO MOLECULAR-DYNAMICS SINGLE-PHOTON EMISSION AUGMENTED-WAVE METHOD MINIMUM ENERGY PATHS ELASTIC BAND METHOD SADDLE-POINTS GAN NANOWIRES QUANTUM DOTS ZNO NANORODS SOLAR-CELLS |
| Issue Date | 2016 |
| Publisher | NANO LETTERS |
| Citation | NANO LETTERS.2016,16,(2),1328-1334. |
| Abstract | Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (000 (1) over bar) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (000 (1) over bar) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices. |
| URI | http://hdl.handle.net/20.500.11897/435740 |
| ISSN | 1530-6984 |
| DOI | 10.1021/acs.nanolett.5b04726 |
| Indexed | SCI(E) EI PubMed |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
