| Title | Effects of annealing on the properties of the Mg-ion implanted p-GaN layer |
| Authors | Luo, Haojun Hu, Chengyu Yao, Shude Qin, Zhixin |
| Affiliation | State Key Laboratory of Artificial Microstructure and Microscopic Physics, Peking University, Beijing 100871, China Research Center for Wide Gap Semiconductors, Peking University, Beijing 100871, China School of Physics, Peking University, Beijing 100871, China |
| Issue Date | 2006 |
| Publisher | cailiao yanjiu xuebaochinese journal of materials research |
| Citation | Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research.2006,20,(2),120-124. |
| Abstract | The effects of annealing on the structural, optical and electrical properties of the Mg-implanted p-GaN layer had been investigated. The results showed that the crystalline quality of the p-GaN layer decreased with the increase of implantation dose. The implanted GaN lattices expanded in the c axis and a axis direction. Two new Raman peaks around 300 and 360 cm-1 were observed, which were assigned to the highest acoustic phonon branch at the Brillouin zone boundaries and the local vibrations of complex vacancy, respectively. The critical temperature for the recovery of damages related to these two peaks was different. For those implanted dose higher than 1 ?? 1014 cm-2 samples, the crystalline quality could only be recovered partly. |
| URI | http://hdl.handle.net/20.500.11897/410436 |
| ISSN | 10053093 |
| Indexed | EI |
| Appears in Collections: | 人工微结构和介观物理国家重点实验室 |
