| Title | Experimental Study on Quasi-Ballistic Transport in Silicon Nanowire Transistors and the Impact of Self-Heating Effects |
| Authors | Wang, Runsheng Zhuge, Jing Liu, Changze Huang, Ru Kim, D.W. Park, Donggun Wang, Yangyuan |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Issue Date | 2008 |
| Citation | IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST.. |
| Abstract | The ballistic efficiency and self-heating effects in gate-all-around silicon nanowire transistors (SNWTs) are experimentally investigated in this paper. A modified experimental extraction method for SNWTs is proposed, which takes into account the impact of source contact resistance. The highest ballistic efficiency is observed in sub-40nm SNWTs at room temperature, demonstrating their intrinsic potential for near-ballistic transport. However, it is experimentally found that, even if the SNWT is fabricated on bulk-Si substrate, the self-heating effect is comparable or even a little bit worse than SOI devices due to the I-D nature of nanowire and increased phonon-boundary scattering- in GAA structure. Considering heat transport and heating corrections at the drain side, the Lundstrom model is modified, and the impacts of self-heating on quasi-ballistic SNWTs are discussed as well. |
| URI | http://hdl.handle.net/20.500.11897/153508 |
| DOI | 10.1109/IEDM.2008.4796806 |
| Indexed | EI CPCI-S(ISTP) |
| Appears in Collections: | 信息科学技术学院 |
