| Title | A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs): Principle, Physical Limits and Parameter Fluctuations |
| Authors | Zhang, Liangliang Kang, Zhaoyi Wang, Runsheng Huang, Ru |
| Affiliation | Peking Univ, Key Lab Microelect Devices & Circuits, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | FIELD-EFFECT TRANSISTORS PERFORMANCE SOURCE/DRAIN MOSFETS |
| Issue Date | 2008 |
| Citation | 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4.. |
| Abstract | P-type Schottky barrier nanowire transistors (p-SB-NWTs) are computational studied in this paper. We analyzed the working principle and physical limits on their performance in details. The impact of Schottky contact of SB-NWTs on the current drivability, gate control and RF performance are studied comparing with conventional silicon nanowire transistors (SNWTs). It is pointed out that the inferior performance of SB-NWTs can not be solved by changing the S/D or channel materials. On the other hand, small V(1), F(1) and on-off ratio fluctuation caused by process variation on channel diameter are observed, which is an advantage of SB-NWTs. |
| URI | http://hdl.handle.net/20.500.11897/153427 |
| DOI | 10.1109/ICSICT.2008.4734495 |
| Indexed | EI CPCI-S(ISTP) |
| Appears in Collections: | 信息科学技术学院 |
