| Title | Analog/RF performance of Si nanowire MOSFETs and the impact of process variation |
| Authors | Wang, Runsheng Zhuge, Jing Huang, Ru Tian, Yu Xiao, Han Zhang, Liangliang Li, Chen Zhang, Xing Wang, Yangyuan |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | analog process variation radio frequency (RF) Si nanowire transistor (SNWT) FIELD-EFFECT-TRANSISTOR SILICON-NANOWIRE NANOSCALE MOSFETS DRIFT-DIFFUSION SOI MOSFETS GATE SIMULATION RF DEVICE SEMICONDUCTOR |
| Issue Date | 2007 |
| Publisher | ieee电子器件汇刊 |
| Citation | IEEE TRANSACTIONS ON ELECTRON DEVICES.2007,54,(6),1288-1294. |
| Abstract | In this paper, the analog/RF performance of Si nanowire transistors (SNWTs) and the impact of process variation are investigated for the, first time. Analog/RF figures of merit of SNWTs are studied, including transconductance efficiency g(m)/I-d, intrinsic gain g(m)/g(d), cutoff frequency f(t), and maximum oscillation frequency f(max). The results indicate that SNWTs exhibit superior intrinsic RF scaling capability and are suitable for low-power analog/RF applications. The impact of nanowire cross-sectional shape fluctuation that is caused by process variation is studied and found to be relatively severe, and the acceptable variation tolerance for RF integrated circuit design is given. |
| URI | http://hdl.handle.net/20.500.11897/152971 |
| ISSN | 0018-9383 |
| DOI | 10.1109/TED.2007.896598 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
