Browsing by Author Wang, YY

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Issue Date Title Author(s)
2004 A 2.4 GHz fully integrated CMOS LC VCO Shi, H;Zhang, GY;Wang, YY
2006 3D nanohelix fabrication and 3D nanometer assembly by focused ion beam stress-introducing technique Xia, L;Wu, WG;Xu, J;Hao, YL;Wang, YY
2004 3D simulation of profile evolution in silicon DRIE Zhou, RC;Zhang, HX;Hao, YL;Wang, YY
2004 A20 is a potent inhibitor of TLR3-and Sendai virus-induced activation of NF-kappa B and ISRE and IFN-beta promoter Wang, YY;Li, LY;Han, KJ;Zhai, ZH;Shu, HB
2001 Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS He, J;Zhang, X;Huang, R;Wang, YY
2001 Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring He, J;Huang, R;Zhang, X;Wang, YY;Chen, XB
1996 Analytical modeling for the collector current in SOI gate-controlled hybrid transistor Huang, R;Wang, YY;Han, RQ
1996 Analytical relations pertaining to collector current density and base transit time in bipolar transistors Ma, PX;Zhan, LC;Wang, YY
2003 Anti-thrombotic activity of PDR, a newly synthesized L-Arg derivative, on three thrombosis models in rats Tang, ZY;Wang, YY;Xiao, YL;Zhao, M;Peng, SQ
2002 Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOINMOSFETs He, J;Zhang, X;Huang, R;Wang, YY
2004 Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation Yu, M;Huang, R;Zhang, X;Wang, YY;Suzuki, K;Oka, H
2002 Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED Yu, M;Huang, R;Zhang, X;Wang, YY;Oka, H
2003 Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED Yu, M;Huang, R;Zhang, X;Wang, YY;Oka, H
2005 Autoantibodies against glomerular mesangial cells and their target antigens in lupus nephritis Chen, M;Wang, YY;Zhao, MH;Zhang, YK;Wang, HY
2002 Avalanche breakdown characteristics of 3-D curved-abrupt junctions predicted by equivalent junction technique He, J;Li, YX;Huang, R;Zhang, X;Wang, YY
1997 Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT) Huang, R;Zhang, X;Xi, XM;Li, YX;Wang, YY
2006 Benchmark tests on surface potential based charge-sheet models He, J;Zhang, X;Zhang, GG;Wang, YY
2000 A bulk micromachined vibratory lateral gyroscope fabricated with wafer bonding and deep trench etching Li, ZH;Yang, ZC;Xiao, ZX;Hao, YL;Li, T;Wu, GY;Wang, YY
2006 A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs He, J;Zhang, X;Zhang, GG;Chan, MS;Wang, YY
1998 The challenges for physical limitations in Si microelectronics Wang, YY;Han, RQ;Liu, XY;Kang, JF
Showing results 1 to 20 of 161 next >