| Issue Date |
Title |
Author(s) |
| Feb-2021 |
Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes |
Lang, J.;Xu, F. J.;Sun, Y. H.;Zhang, N.;Wang, J. M.;Liu, B. Y.;Wang, L. B.;Xie, N.;Fang, X. Z.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Ge, W. K.;Shen, B. |
| 26-May-2020 |
Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission |
Sun, Y. H.;Xu, F. J.;Xie, N.;Wang, J. M.;Zhang, N.;Lang, J.;Liu, B. Y.;Fang, X. Z.;Wang, L. B.;Ge, W. K.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Shen, B. |
| 2018 |
Crystal quality evolution of AlN films via high-temperature annealing under ambient N-2 conditions |
Wang, M. X.;Xu, F. J.;Xie, N.;Sun, Y. H.;Liu, B. Y.;Qin, Z. X.;Wang, X. Q.;Shen, B. |
| 2019 |
Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer |
Lang, J.;Xu, F. J.;Ge, W. K.;Liu, B. Y.;Zhang, N.;Sun, Y. H.;Wang, J. M.;Wang, M. X.;Xie, N.;Fang, X. Z.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Shen, B. |
| 2019 |
High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers |
Lang, J.;Xu, F. J.;Ge, W. K.;Liu, B. Y.;Zhang, N.;Sun, Y. H.;Wang, M. X.;Xie, N.;Fang, X. Z.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Shen, B. |
| 2019 |
High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates |
Wang, M. X.;Xu, F. J.;Xie, N.;Sun, Y. H.;Liu, B. Y.;Ge, W. K.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Shen, B. |
| 30-Sep-2020 |
Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes |
Ran, J. X.;Liu, B. Y.;Ji, X. L.;Fariza, A.;Liu, Z. T.;Wang, J. X.;Gao, P.;Wei, T. B. |
| 18-Jan-2021 |
Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer |
Zhang, N.;Xu, F. J.;Lang, J.;Wang, L. B.;Wang, J. M.;Sun, Y. H.;Liu, B. Y.;Xie, N.;Fang, X. Z.;Yang, X. L.;Kang, X. N.;Wang, X. Q.;Qin, Z. X.;Ge, W. K.;Shen, B. |
| 31-May-2021 |
Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment |
Zhang, N.;Xu, F. J.;Lang, J.;Wang, L. B.;Wang, J. M.;Liu, B. Y.;Fang, X. Z.;Yang, X. L.;Kang, X. N.;Wang, X. Q.;Qin, Z. X.;Ge, W. K.;Shen, B. |
| 2019 |
Realization of low dislocation density AlN on a small-coalescence-area nano-patterned sapphire substrate |
Xu, F. J.;Zhang, L. S.;Xie, N.;Wang, M. X.;Sun, Y. H.;Liu, B. Y.;Ge, W. K.;Wang, X. Q.;Shen, B. |
| 2019 |
The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes |
Wang, M. X.;Xu, F. J.;Wang, J. M.;Xie, N.;Sun, Y. H.;Liu, B. Y.;Lang, J.;Zhang, N.;Ge, W. K.;Kang, X. N.;Qin, Z. X.;Yang, X. L.;Wang, X. Q.;Shen, B. |
