| Title | New Insights Into Memory Window of Ferroelectric FET Impacted by Read Operations With Awareness of Polarization Switching Dynamics |
| Authors | Su, Chang Huang, Qianqian Wang, Kaifeng Fu, Zhiyuan Huang, Ru |
| Affiliation | Peking Univ, Sch Integrated Circuits, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China Chinese Inst Brain Res, Beijing 102206, Peoples R China |
| Keywords | FIELD TRANSISTORS ENDURANCE |
| Issue Date | Jul-2022 |
| Publisher | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Abstract | In this article, the impacts of read operation under transient gate voltage sweep on the memory window (MW) of ferroelectric field-effect transistor (FeFET) are systematically investigated. By taking into consideration the polarization switching dynamics, it reveals a significant dependence on the sweep range and rate of gate voltage. With increasing sweep range, the increase of polarization switching leads to the monotonically increasing MW. However, different from sweep range, the MW of FeFET nonmonotonically varies with the increasing sweep rate, which is caused by the competition between decreased polarization switching and increased voltage drop on ferroelectric (FE) layer during forward sweep. Besides, compared with the MW obtained by pulsed gate voltage, it is found that the MW obtained by swept gate voltage can be the smaller one even without the consideration of charge trapping contribution. Furthermore, the impacts of FE switching time on MW are also discussed, indicating that the MW may not always be a constant even under quasi-static sweeping with low sweep rate, and the relationship between sweep rate of gate voltage and switching speed of FE plays a critical role in MW evaluation. |
| URI | http://hdl.handle.net/20.500.11897/650211 |
| ISSN | 0018-9383 |
| DOI | 10.1109/TED.2022.3190824 |
| Indexed | SCI(E) |
| Appears in Collections: | 待认领 |
