| Title | Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices |
| Authors | Lu, Zhanjie Zhu, Meijie Liu, Yifan Zhang, Gehui Tan, Zuoquan Li, Xiaotian Xu, Shuaishuai Wang, Le Dou, Ruifen Wang, Bin Yao, Yuan Zhang, Zhiyong Dong, Jichen Cheng, Zhihai Chen, Shanshan |
| Affiliation | Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China Renmin Univ China, Beijing Key Lab Optoelect Funct Nat Mat & Microna, Beijing 100872, Peoples R China Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Peking Univ, Ctr Carbon Based Elect, Beijing 100871, Peoples R China Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China |
| Keywords | AMMONIA BORANE TRANSITION MOBILITY OXIDATION HYDROGEN |
| Issue Date | 8-Jun-2022 |
| Publisher | ACS APPLIED MATERIALS & INTERFACES |
| Abstract | Two-dimensional materials (2DMs) with extraordinary electronic and optical properties have attracted great interest in optoelectronic applications. Due to their atomically thin feature, 2DM-based devices are generally sensitive to oxygen and moisture in ambient air, and thus, practical application of durable 2DM-based devices remains challenging. Here, we report a novel strategy to directly synthesize amorphous BN film on various 2DMs and field-effect transistor (FET) devices at low temperatures by conventional chemical vapor deposition. The wafer-scale BN film with controllable thickness serves as a passivation and heat dissipation layer, further improving the long-term stability, the resistance to laser irradiation, and the antioxidation performance of the underneath 2DMs. In particular, the BN capping layer could be deposited directly on a WSe2 FET at low temperature to achieve a clean and conformal interface. The high performance of the BN-capped WSe2 device is realized with suppressed current fluctuations and 10-fold enhanced carrier mobility. The transfer-free amorphous BN synthesis technique is simple and applicable to various 2DMs grown on arbitrary substrates, which shows great potential for applications in future two-dimensional electronics. |
| URI | http://hdl.handle.net/20.500.11897/647939 |
| ISSN | 1944-8244 |
| DOI | 10.1021/acsami.2c02803 |
| Indexed | SCI(E) |
| Appears in Collections: | 纳米器件物理与化学教育部重点实验室 |
